| No. |
Part Name |
Description |
Manufacturer |
| 241 |
2SD811 |
Silicon NPN triple diffused high power, high voltage (900V) switching transistor |
TOSHIBA |
| 242 |
2SJ127 |
Silicon P-Channel MOS FET, High Speed Power Switching |
Hitachi Semiconductor |
| 243 |
2SK16H |
Silicon N-CHANNEL Junction Type FET Transistor, High Input Impedance Amplifier |
Hitachi Semiconductor |
| 244 |
2SK277 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 245 |
2SK277 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 246 |
2SK278 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 247 |
2SK278 |
N-Channel Power MOS FET, high voltage, high current and high speed switching |
NEC |
| 248 |
2SK324 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 249 |
2SK325 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 250 |
2SK355 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 251 |
2SK356 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 252 |
2SK357 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 253 |
2SK358 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 254 |
2SK367 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 255 |
2SK373 |
Field Effect Transistor Silicon N Channel Junction Type For Audio, High Voltage Amplifier and Constant Current Applications |
TOSHIBA |
| 256 |
2SK385 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 257 |
2SK386 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 258 |
2SK387 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 259 |
2SK388 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 260 |
2SK417 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 261 |
2SK418 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 262 |
2SK419 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 263 |
2SK420 |
Silicon N-Channel π-MOS high-speed, high voltage industrial transistor |
TOSHIBA |
| 264 |
2SK421 |
Silicon N-Channel π-MOS high-speed, high voltage transistor |
TOSHIBA |
| 265 |
3000 |
Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz |
SGS Thomson Microelectronics |
| 266 |
31DF6 |
LOW POWER LOSS, HIGH EFFICIENCY |
Nihon |
| 267 |
3583 |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 268 |
3583AM |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 269 |
3583JM |
High Voltage, High Current OPERATIONAL AMPLIFIER |
Burr Brown |
| 270 |
3584 |
High Voltage, High Speed OPERATIONAL AMPLIFIER |
Burr Brown |
| | | |
