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Datasheets for . 80

Datasheets found :: 189
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No. Part Name Description Manufacturer
121 CSA1316 0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 700 hFE Continental Device India Limited
122 CSA1316BL 0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE Continental Device India Limited
123 CSA1316GR 0.400W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE Continental Device India Limited
124 CSA984K 0.600W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 60 - 320 hFE Continental Device India Limited
125 CSA984KD 0.600W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 60 - 120 hFE Continental Device India Limited
126 CSA984KE 0.600W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 100 - 200 hFE Continental Device India Limited
127 CSA984KF 0.600W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 160 - 320 hFE Continental Device India Limited
128 CSC3329 0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 700 hFE Continental Device India Limited
129 CSC3329BL 0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 350 - 700 hFE Continental Device India Limited
130 CSC3329GR 0.400W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.100A Ic, 200 - 400 hFE Continental Device India Limited
131 CSD1833 2.000W Low Frequency NPN Plastic Leaded Transistor. 80V Vceo, 7.000A Ic, 60 - 320 hFE. Continental Device India Limited
132 CSD667 0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 60 - 320 hFE Continental Device India Limited
133 CTN639 0.750W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
134 CTN640 1.000W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE Continental Device India Limited
135 K4R271669AM-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
136 K4R271669AN-CK8 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
137 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
138 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
139 KLPC800 KLPC series POWR-PRO class L fuse. Time-delay. 800A, 600VAC, 480VDC. Littelfuse
140 LDC800 POWR-PRO class L fuse. 800 amperes. Voltage rating: 600 Volts AC 600 Volts DC. Interrupting rating: AC: 200,000 amperes rms symmetrical, DC: 50,000 ampetres(16 millisecond time constant). Littelfuse
141 MJ4031 Darlington PNP silicon power transistor. 80 V, 16 A, 150 W. Motorola
142 MJ4034 Darlington NPN silicon power transistor. 80 V, 16 A, 150 W. Motorola
143 MJE172 12.500W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
144 MJE182 12.500W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 50 - 250 hFE. Continental Device India Limited
145 MPS8099 0.625W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 100 - 300 hFE Continental Device India Limited
146 MPS8599 0.625W General Purpose PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 100 - 300 hFE Continental Device India Limited
147 PN4356 0.625W Switching PNP Plastic Leaded Transistor. 80V Vceo, 0.500A Ic, 30 hFE. Continental Device India Limited
148 RCA9228B 50A high current medium voltage N-P-N silicon darlington power transistor. 80V, 300W. General Electric Solid State
149 RCA9229B 50A high current medium voltage P-N-P silicon darlington power transistor. 80V, 300W. General Electric Solid State
150 S6000N High voltage, medium current silicon controlled rectifier. 800V. General Electric Solid State


Datasheets found :: 189
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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