No. |
Part Name |
Description |
Manufacturer |
121 |
2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor |
GHz Technology |
122 |
2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
123 |
2223-1.7 |
1.7 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
124 |
2223-9A |
9 W, 24 V, 2200-2300 MHz common base transistor |
GHz Technology |
125 |
2224-12L |
12 W, 22 V, 2200-2400 MHz common base transistor |
GHz Technology |
126 |
2225-4L |
3.5 W, 24 V, 2200-2500 MHz common base transistor |
GHz Technology |
127 |
2304 |
4 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
128 |
2307 |
7 W, 20 V, 2300 MHz common base transistor |
GHz Technology |
129 |
2324-12L |
12 W, 20 V, 2300-2400 MHz common base transistor |
GHz Technology |
130 |
2324-20 |
20 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
131 |
2324-5 |
5 W, 24 V, 2300-2400 MHz common base transistor |
GHz Technology |
132 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
133 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
134 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
135 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
136 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
137 |
2425-25 |
25 W, 24 V, 2410-2470 MHz common base transistor |
GHz Technology |
138 |
27-FEB |
10 TO 500 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
139 |
28-FEB |
10 TO 1000 MHz CASCADABLE AMPLIFIER |
Tyco Electronics |
140 |
2910 |
10 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
141 |
2920 |
20 MHz BIPOLAR LOGARITHMIC AMPLIFIER |
Optical Electronics Incorporated |
142 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
143 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
144 |
2N4427 |
Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage |
VALVO |
145 |
2N6080 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
146 |
2N6081 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
147 |
2N6083 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
148 |
2N6084 |
RF & MICROWAVE TRANSISTORS 130... 230 MHZ FM MODULE APPLICATIONS |
Microsemi |
149 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
150 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
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