No. |
Part Name |
Description |
Manufacturer |
151 |
2SC2558K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) |
NEC |
152 |
2SC2558M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080191 series is also the datasheet of 2SC2558M, see the Electrical Characteristics table) |
NEC |
153 |
2SC2559K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080490 series is also the datasheet of 2SC2559K, see the Electrical Characteristics table) |
NEC |
154 |
2SC2559M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE080491 series is also the datasheet of 2SC2559M, see the Electrical Characteristics table) |
NEC |
155 |
2SC2652 |
V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications |
TOSHIBA |
156 |
2SC2850K |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) |
NEC |
157 |
2SC2850M |
Class C, 860 MHz 12 volt power transistor (This datasheet of NE081091 series is also the datasheet of 2SC2850M, see the Electrical Characteristics table) |
NEC |
158 |
2SC3218-M |
NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE |
NEC |
159 |
2SD1398 |
RF & microwave transistor 850-960 MHz applications, 24 volts, 53W |
SGS Thomson Microelectronics |
160 |
2SD1398 |
RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS |
ST Microelectronics |
161 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
SGS Thomson Microelectronics |
162 |
2SD1414 |
RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS |
ST Microelectronics |
163 |
2SK2597 |
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
NEC |
164 |
2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
165 |
2SK3078 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
166 |
2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
TOSHIBA |
167 |
2SK3079A |
Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
TOSHIBA |
168 |
3001 |
1 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
169 |
3003 |
3 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
170 |
3005 |
5 W, 28 V, 3000 MHz common base transistor |
GHz Technology |
171 |
5962-9095501M2A |
DC-Coupled Demodulating 120 MHz Logarithmic Amplifier |
Analog Devices |
172 |
5962-9095501MRA |
DC-Coupled Demodulating 120 MHz Logarithmic Amplifier |
Analog Devices |
173 |
5962-9559801MRA |
250 MHz Demodulating Logarithmic Amplifier |
Analog Devices |
174 |
5962-9683901MPA |
160 MHz Rail-to-Rail Amplifier with Disable |
Analog Devices |
175 |
5962-9864601QEA |
5 MHz-400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier |
Analog Devices |
176 |
7001 |
900 MHz THREE GAIN LEVEL LNA |
SGS Thomson Microelectronics |
177 |
7001 |
900 MHz THREE GAIN LEVEL LNA |
ST Microelectronics |
178 |
7300 Series |
Temperature Stable Dielectric Resonators High Q for 700 MHz to 4 GHz range |
Skyworks Solutions |
179 |
778D |
778D Coaxial Dual-Directional Coupler, 100 MHz to 2 GHz |
Agilent (Hewlett-Packard) |
180 |
80143 |
1 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
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