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Datasheets for 0 MHZ

Datasheets found :: 4537
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2SC2558K Class C, 860 MHz 12 volt power transistor (This datasheet of NE080190 series is also the datasheet of 2SC2558K, see the Electrical Characteristics table) NEC
152 2SC2558M Class C, 860 MHz 12 volt power transistor (This datasheet of NE080191 series is also the datasheet of 2SC2558M, see the Electrical Characteristics table) NEC
153 2SC2559K Class C, 860 MHz 12 volt power transistor (This datasheet of NE080490 series is also the datasheet of 2SC2559K, see the Electrical Characteristics table) NEC
154 2SC2559M Class C, 860 MHz 12 volt power transistor (This datasheet of NE080491 series is also the datasheet of 2SC2559M, see the Electrical Characteristics table) NEC
155 2SC2652 V(cbo): 85V; V(ces): 85V; V(ceo): 55V; V(ebo): 4V; 20A; 300W; silicon NPN epitaxial planar transistor. For 2-30 MHz SSB linear power amplifier applications TOSHIBA
156 2SC2850K Class C, 860 MHz 12 volt power transistor (This datasheet of NE081090 series is also the datasheet of 2SC2850K, see the Electrical Characteristics table) NEC
157 2SC2850M Class C, 860 MHz 12 volt power transistor (This datasheet of NE081091 series is also the datasheet of 2SC2850M, see the Electrical Characteristics table) NEC
158 2SC3218-M NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE NEC
159 2SD1398 RF & microwave transistor 850-960 MHz applications, 24 volts, 53W SGS Thomson Microelectronics
160 2SD1398 RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS ST Microelectronics
161 2SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS SGS Thomson Microelectronics
162 2SD1414 RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS ST Microelectronics
163 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION NEC
164 2SK3077 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
165 2SK3078 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
166 2SK3079 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) TOSHIBA
167 2SK3079A Field Effect Transistor Silicon N Channel MOS Type 470 MHz Band Amplifier Applications TOSHIBA
168 3001 1 W, 28 V, 3000 MHz common base transistor GHz Technology
169 3003 3 W, 28 V, 3000 MHz common base transistor GHz Technology
170 3005 5 W, 28 V, 3000 MHz common base transistor GHz Technology
171 5962-9095501M2A DC-Coupled Demodulating 120 MHz Logarithmic Amplifier Analog Devices
172 5962-9095501MRA DC-Coupled Demodulating 120 MHz Logarithmic Amplifier Analog Devices
173 5962-9559801MRA 250 MHz Demodulating Logarithmic Amplifier Analog Devices
174 5962-9683901MPA 160 MHz Rail-to-Rail Amplifier with Disable Analog Devices
175 5962-9864601QEA 5 MHz-400 MHz 100 dB High Precision Limiting-Logarithmic Amplifier Analog Devices
176 7001 900 MHz THREE GAIN LEVEL LNA SGS Thomson Microelectronics
177 7001 900 MHz THREE GAIN LEVEL LNA ST Microelectronics
178 7300 Series Temperature Stable Dielectric Resonators High Q for 700 MHz to 4 GHz range Skyworks Solutions
179 778D 778D Coaxial Dual-Directional Coupler, 100 MHz to 2 GHz Agilent (Hewlett-Packard)
180 80143 1 W, 15 V, 2300 MHz common emitter transistor GHz Technology


Datasheets found :: 4537
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



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