No. |
Part Name |
Description |
Manufacturer |
121 |
ADP3335ARM-2.85 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
122 |
ADP3335ARM-3.3 |
0.3-16V; 200mW; 500MHz, high accuracy ultralow 500mA anyCAP low dropout regulator. For PCMCIA card, cellular phones, camcorders and cameras |
Analog Devices |
123 |
AF121 |
Application Note - 100MHz preamplifier |
COMPELEC |
124 |
AF240 |
PNP Germanium RF Transistor, for mixer and oscillator stages up to 900MHz |
Siemens |
125 |
AF279 |
PNP Germanium UHF Transistor in Special T Case, for prestages up to 900MHz |
Siemens |
126 |
AF279S |
PNP Germanium UHF Transistor in Special T Case, for prestages up to 900MHz |
Siemens |
127 |
AF280 |
PNP Germanium UHF Transistor in Special T Case, up to 900MHz |
Siemens |
128 |
AF379 |
PNP Germanium RF Transistor for RF tuner stages up to 900MHz |
Siemens |
129 |
AG602-89 |
DC- 5000MHz InGap HBT gain block |
WJ Communications |
130 |
AM1416-001 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
131 |
AM1416-003 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
132 |
AM81416-006 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
133 |
AM81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
134 |
AM81416-020 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
135 |
AMD-K6-200ALR |
Processor AMD-K6 family, operating voltage=3.1V�3.3V, 200MHz |
Advanced Micro Devices |
136 |
AMD-K6_200AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 200MHz |
Advanced Micro Devices |
137 |
AMD-K6_300AFR |
Processor AMD-K6 family, operating voltage=2.1V�2.3V, 300MHz |
Advanced Micro Devices |
138 |
AMR960-35HU |
Linear Power Amplifier 35W, 860-900MHz, 26Vcc |
Motorola |
139 |
AMR960-35U |
Linear Power Amplifier 35W, 860-900MHz, 26Vcc |
Motorola |
140 |
AMR960-70U |
Linear Power Amplifier 70W, 860-900MHz, 26Vcc |
Motorola |
141 |
AN-6010 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
142 |
AN-923 |
Application Note - 800MHz test fixture design |
Motorola |
143 |
APPLICATION NOTE |
800MHZ TEST FIXTURE DESIGN |
Motorola |
144 |
ARF463A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
145 |
ARF463B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 125V 100W 100MHz |
Advanced Power Technology |
146 |
ARF464A |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
147 |
ARF464B |
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 65V 100W 100MHz |
Advanced Power Technology |
148 |
AS7C33128PFD32A-100TQC |
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
149 |
AS7C33128PFD32A-100TQI |
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
150 |
AS7C33128PFD36A-100TQC |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz |
Alliance Semiconductor |
| | | |