No. |
Part Name |
Description |
Manufacturer |
31 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
32 |
2SA495 |
Silicon PNP epitaxial planar transistor for General Amplifier Applications fT=200MHz, complementary to 2SC372 |
TOSHIBA |
33 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
34 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
35 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
36 |
2SC1196 |
Silicon NPN epitaxial planar transistor, 700MHz- Power amplifier applications |
TOSHIBA |
37 |
2SC1197 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
38 |
2SC1198 |
Silicon NPN epitaxial planar transistor, 700MHz-Power amplifier applications |
TOSHIBA |
39 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
40 |
2SC387AG |
Silicon NPN epitaxial planar transistor, VHF amplifier, UHF oscillator applications fT=1000MHz |
TOSHIBA |
41 |
2SC400 |
Silicon NPN epitaxial planar RF transistor, fT=300MHz |
TOSHIBA |
42 |
2SC5058S |
25V,50mA, 300MHz high-frequency amplifier transistor |
ROHM |
43 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
44 |
3N159 |
MOS Field-Effect Transistor N-Channel Depletion Type, for RF up to 300MHz |
RCA Solid State |
45 |
3N187 |
MOS Field-Effect Transistor N-Channel Depletion Type with integrated gate-protection circuit, up to 300MHz |
RCA Solid State |
46 |
3N200 |
MOS Field-Effect Transistor N-Channel Depletion Type, for Military and Industrial Applications up to 500MHz |
RCA Solid State |
47 |
40673 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, up to 400MHz |
RCA Solid State |
48 |
40841 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor from DC to 500MHz |
RCA Solid State |
49 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
50 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
51 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
52 |
5962-0623501 |
500MHz Rail-to-Rail Amplifier |
Intersil |
53 |
5962-0623502 |
500MHz Rail-to-Rail Amplifier |
Intersil |
54 |
5962-0721301QX |
500MHz Rail-to-Rail Amplifiers |
Intersil |
55 |
5962-0721302QX |
500MHz Rail-to-Rail Amplifiers |
Intersil |
56 |
5962-0721303QY |
500MHz Rail-to-Rail Amplifiers |
Intersil |
57 |
5962-9203001M2A |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
58 |
5962-9203001M2A |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
59 |
5962-9203001MPA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
60 |
5962-9203001MPA |
General Purpose 100MHz Op Amp with Disable [Life-time buy] |
National Semiconductor |
| | | |