| No. |
Part Name |
Description |
Manufacturer |
| 121 |
K4F170812D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 122 |
K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 123 |
K4F640812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 124 |
K4F640812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 125 |
K4F660812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 126 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 127 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 128 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 129 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 130 |
K4F660812D-JC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 131 |
K4F660812D-TC_L |
8M x 8bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 132 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 133 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 134 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 135 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 136 |
MAH1000503R30812Q |
10W Total Output Power 100 Vin Vout Quad DC-DC Radiation Hardened Converter in a MAH Package. |
International Rectifier |
| 137 |
MEB90812 |
Evaluation Kit Preliminary Information |
Mitel Semiconductor |
| 138 |
MEB90812A |
Evaluation Kit Preliminary Information |
Mitel Semiconductor |
| 139 |
MEB90812A-P |
Evaluation Kit Preliminary Information |
Mitel Semiconductor |
| 140 |
MLS9118-00812 |
CDMA 799-824 MHz, Surface mount frequency synthesizer |
MA-Com |
| 141 |
MLS9118-00812 |
Surface Mount Frequency Synthesizer CDMA 799 - 824 MHz |
Tyco Electronics |
| 142 |
MLS9118-00812TR |
CDMA 799-824 MHz, Surface mount frequency synthesizer |
MA-Com |
| 143 |
MT90812 |
64 X 64 channels Multi-Featured Integrated Digital Switch (IDX) with Conferencing, DTMF and FSK Tone Generation for SOHO and PBX Systems |
Zarlink Semiconductor |
| 144 |
MT90812AL |
Integrated Digital Switch (IDX) |
Mitel Semiconductor |
| 145 |
MT90812AP |
Integrated Digital Switch (IDX) |
Mitel Semiconductor |
| 146 |
PF08127B |
ASSP>Mobile Phones>RF Power Amplifiers |
Renesas |
| 147 |
R7200812 |
General Purpose Rectifier (600-1200 Amperes Average 4400 Volts) |
Powerex Power Semiconductors |
| 148 |
R7S00812 |
800V, 1200A general purpose single diode |
Powerex Power Semiconductors |
| 149 |
R9G00812 |
800V, 1200A general purpose single diode |
Powerex Power Semiconductors |
| 150 |
R9G20812 |
Fast Recovery Rectifier (1200Amperes Average 3600 Volts) |
Powerex Power Semiconductors |
| | | |
