No. |
Part Name |
Description |
Manufacturer |
31 |
IDT79RV308120FDB |
RIScontroller with FPA |
IDT |
32 |
IDT79RV308120J |
RIScontroller with FPA |
IDT |
33 |
IDT79RV308120JB |
RIScontroller with FPA |
IDT |
34 |
IDT79RV308120MJB |
RIScontroller with FPA |
IDT |
35 |
IDT79RV308120PFB |
RIScontroller with FPA |
IDT |
36 |
IDT79RV308125FD |
RIScontroller with FPA |
IDT |
37 |
IDT79RV308125FDB |
RIScontroller with FPA |
IDT |
38 |
IDT79RV308125J |
RIScontroller with FPA |
IDT |
39 |
IDT79RV308125JB |
RIScontroller with FPA |
IDT |
40 |
IDT79RV308125MJB |
RIScontroller with FPA |
IDT |
41 |
IDT79RV308125PFB |
RIScontroller with FPA |
IDT |
42 |
IDT79VR308120PF |
RIScontroller with FPA |
IDT |
43 |
IDT79VR308125PF |
RIScontroller with FPA |
IDT |
44 |
K4E160812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
45 |
K4E160812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
46 |
K4E160812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
47 |
K4E170812D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
48 |
K4E170812D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
49 |
K4E170812D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
50 |
K4E640812B |
8M x 8bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
51 |
K4E640812B-JC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
52 |
K4E640812B-JC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
53 |
K4E640812B-JC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
54 |
K4E640812B-JCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
55 |
K4E640812B-JCL-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
56 |
K4E640812B-JCL-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
57 |
K4E640812B-TC-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
58 |
K4E640812B-TC-5 |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns |
Samsung Electronic |
59 |
K4E640812B-TC-6 |
8M x 8bit CMOS dynamic RAM with extended data out, 60ns |
Samsung Electronic |
60 |
K4E640812B-TCL-45 |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns |
Samsung Electronic |
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