| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N6288C |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 122 |
1N6288CA |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 123 |
1N6294 |
91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 124 |
1N6294A |
91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 125 |
1N6294C |
91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 126 |
1N6294CA |
91 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 127 |
1N751 |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 128 |
1N751 |
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 129 |
1N751 |
400mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 130 |
1N751A |
5.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 131 |
1N751A |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 132 |
1N751A-1 |
5.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 133 |
1N751B |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 134 |
1N751C |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 135 |
1N751C |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 136 |
1N751D |
500mW, silicon zener diode. Zener voltage 5.1 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 137 |
1N751D |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 138 |
1N757 |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 139 |
1N757 |
500 mW silicon linear diode. Max zener impedance 10.0 Ohm, max zener voltage 9.1 V (Iz 20mA). |
Fairchild Semiconductor |
| 140 |
1N757 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 141 |
1N757A |
9.1 V, 400 mW silicon linear diode |
BKC International Electronics |
| 142 |
1N757A |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-5% tolerance. |
Jinan Gude Electronic Device |
| 143 |
1N757A-1 |
9.1 V, 400 mW silicon zener diode |
BKC International Electronics |
| 144 |
1N757B |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 145 |
1N757C |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 146 |
1N757C |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 147 |
1N757D |
500mW, silicon zener diode. Zener voltage 9.1 V. Test current 20 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 148 |
1N757D |
9.1 V, 20 mA, zener diode |
Leshan Radio Company |
| 149 |
1N960 |
500 mW silicon planar zener diode. Max zener voltage 9.1 V. |
Fairchild Semiconductor |
| 150 |
1N960 |
400mW, 9.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
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