No. |
Part Name |
Description |
Manufacturer |
31 |
1N4766 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
32 |
1N4766A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
33 |
1N4767 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
34 |
1N4767A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
35 |
1N4768 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
36 |
1N4768A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
37 |
1N4769 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
38 |
1N4769A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
39 |
1N4770 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
40 |
1N4770A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
41 |
1N4770A |
Low-level temperature-compensated zener reference diode. Max voltage 0.141 V. |
Motorola |
42 |
1N4771 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
43 |
1N4771A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
44 |
1N4772 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
45 |
1N4772A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
46 |
1N4773 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
47 |
1N4773A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
48 |
1N4774 |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
49 |
1N4774A |
9.1 VOLT NOMINAL ZENER VOLTAGE + 5% |
Compensated Devices Incorporated |
50 |
1N5231 |
500 mW silicon zener diode. Nominal zener voltage 5.1 V. |
Fairchild Semiconductor |
51 |
1N5231 |
500mW, 5.1 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
52 |
1N5231A |
5.1 V, 500 mW silicon zener diode |
BKC International Electronics |
53 |
1N5231A |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
54 |
1N5231AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-10%. |
Microsemi |
55 |
1N5231B |
5.1 V, 500 mW silicon zener diode |
BKC International Electronics |
56 |
1N5231BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. Tolerance +-5%. |
Microsemi |
57 |
1N5231C |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
58 |
1N5231D |
5.1 V, 20 mA, zener diode |
Leshan Radio Company |
59 |
1N5231UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.1 V. |
Microsemi |
60 |
1N5239 |
500 mW silicon zener diode. Nominal zener voltage 9.1 V. |
Fairchild Semiconductor |
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