| No. |
Part Name |
Description |
Manufacturer |
| 121 |
MAX6832HXRD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 122 |
MAX6832VXRD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 123 |
MAX6833HXRD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 124 |
MAX6833VXRD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 125 |
MAX6834HXRD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 126 |
MAX6834VXRD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 127 |
MAX6835HXSD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 128 |
MAX6835VXSD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 129 |
MAX6836HXSD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 130 |
MAX6836VXSD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 131 |
MAX6837HXSD3-T |
1.313 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 132 |
MAX6837VXSD3-T |
1.575 V, 210 ms, ultra-low-voltage voltage detector and mP reset circuit |
MAXIM - Dallas Semiconductor |
| 133 |
MRF9210 |
MRF9210 880 MHz, 200 W, 26 V Lateral N-Channel RF Power MOSFET |
Motorola |
| 134 |
ND430821 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 135 |
ND431021 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 136 |
ND431221 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 137 |
ND431421 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 138 |
ND431621 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 139 |
ND431821 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 140 |
ND432021 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 141 |
ND4321 |
POW-R-BLOK Dual SCR Isolated Module (210 Amperes / Up to 2000 Volts) |
Powerex Power Semiconductors |
| 142 |
NTMFS4933N |
Power MOSFET, 30 V, 210 A, Single N-Channel |
ON Semiconductor |
| 143 |
P4KE200CA |
Transient voltage suppressor. Peak pulse power 400 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 144 |
P6KE200CA |
Transient voltage suppressor. Peak pulse power 600 W. Breakdown voltage Vbr(min) = 190 V, Vbr(max) = 210 V. Test current It = 1.0 mA. |
Shanghai Sunrise Electronics |
| 145 |
Q32M210 |
Q32M210 Precision Mixed-Signal 32-bit Microcontroller |
ON Semiconductor |
| 146 |
QPB2318 |
15.5 dB, 5 MHz - 210 MHz, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 147 |
QPB2328 |
5 - 210 MHz, 17.8 dB, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 148 |
QPB3311 |
5 - 210 MHz, 15.2 dB, Single Ended, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 149 |
QPB3321 |
5 - 210 MHz, 17.5 dB, Single Ended, DOCSIS 3.1 Reverse Amplifier |
Qorvo |
| 150 |
R2005280L |
5 - 210 MHz, 28 dB Si Reverse Hybrid Amplifier (Low Current) |
Qorvo |
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