| No. |
Part Name |
Description |
Manufacturer |
| 151 |
R2005300L |
5 - 210 MHz, 30 dB Si Reverse Hybrid Amplifier (Low Current) |
Qorvo |
| 152 |
R2005350L |
5 - 210 MHz, 35 dB Si Reverse Hybrid Amplifier (Low Current) |
Qorvo |
| 153 |
SKYFR-000918 |
2070-2210 MHz Single Junction Robust Lead Isolator |
Skyworks Solutions |
| 154 |
SKYFR-001080 |
2070—2210 MHz Single Junction Robust Lead Isolator |
Skyworks Solutions |
| 155 |
T-51440GL070HU-FW-AC |
480 x 234dotsl dot pitch:0.3210 x 0.3720mm; 0.2-16.0V; 350mA LCD module |
Optrex Corporation |
| 156 |
TDA8953J |
2 x 210 W class-D power amplifier |
NXP Semiconductors |
| 157 |
TDA8953TH |
2 x 210 W class-D power amplifier |
NXP Semiconductors |
| 158 |
TDA8954J |
2 x 210 W class-D power amplifier |
NXP Semiconductors |
| 159 |
TDA8954TH |
2 x 210 W class-D power amplifier |
NXP Semiconductors |
| 160 |
TIPL785A |
210 V, 15 A, 80 W, NPN monolithic darlington-connected silicon power transistor |
Texas Instruments |
| 161 |
TIPL790A |
210 V, 15 A, 70 W, NPN monolithic darlington-connected silicon power transistor |
Texas Instruments |
| 162 |
TLE 6210 CHIP - C1 |
Braking System ICs and Smart Power Switches |
Infineon |
| 163 |
TLE 6210 G - C1 |
Braking System ICs and Smart Power Switches |
Infineon |
| 164 |
TO-37 |
Case 210 Shape and dimensions package |
Silicon Transistor Corporation |
| 165 |
TU210 10 |
Germanium Tunnel Diode |
Siemens |
| 166 |
TU210 5 |
Germanium Tunnel Diode |
Siemens |
| | | |
