No. |
Part Name |
Description |
Manufacturer |
121 |
2N645 |
Germanium PNP Transistor |
Motorola |
122 |
2N6450 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
123 |
2N6450 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
124 |
2N6451 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
125 |
2N6451 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
126 |
2N6452 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
127 |
2N6452 |
N-CHANNEL SILICON JUNCTION FET |
New Jersey Semiconductor |
128 |
2N6453 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
129 |
2N6454 |
N-Channel Silicon Junction Field-Effect Transistor |
InterFET Corporation |
130 |
2N646 |
Germanium NPN Transistor |
Motorola |
131 |
2N6461 |
Trans GP BJT NPN 300V 0.1A |
New Jersey Semiconductor |
132 |
2N6461 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
133 |
2N6462 |
Trans GP BJT NPN 300V 0.1A |
New Jersey Semiconductor |
134 |
2N6462 |
Bipolar NPN Device |
SemeLAB |
135 |
2N6463 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
136 |
2N6463 |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package |
SemeLAB |
137 |
2N6464 |
Trans GP BJT NPN 250V 0.1A |
New Jersey Semiconductor |
138 |
2N6464 |
Bipolar NPN Device |
SemeLAB |
139 |
2N6465 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
140 |
2N6465 |
Trans GP BJT NPN 100V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
141 |
2N6465 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
142 |
2N6465 |
Bipolar NPN Device |
SemeLAB |
143 |
2N6466 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
144 |
2N6466 |
Trans GP BJT NPN 120V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
145 |
2N6466 |
Silicon NPN Power Transistors TO-66 package |
Savantic |
146 |
2N6467 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
147 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
148 |
2N6467 |
Trans GP BJT PNP 100V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
149 |
2N6467 |
Silicon PNP Power Transistors TO-66 package |
Savantic |
150 |
2N6467 |
Bipolar PNP Device |
SemeLAB |
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