No. |
Part Name |
Description |
Manufacturer |
61 |
2N6426 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
62 |
2N6426 |
NPN Darlington Transistor |
Fairchild Semiconductor |
63 |
2N6426 |
Small Signal Darlington NPN |
ON Semiconductor |
64 |
2N6426-D |
Darlington Transistors NPN Silicon |
ON Semiconductor |
65 |
2N6426RLRA |
Small Signal Darlington NPN |
ON Semiconductor |
66 |
2N6426_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
67 |
2N6426_D74Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
68 |
2N6427 |
Leaded Small Signal Transistor Darlington |
Central Semiconductor |
69 |
2N6427 |
NPN Darlington Transistor |
Fairchild Semiconductor |
70 |
2N6427 |
Small Signal Darlington NPN |
ON Semiconductor |
71 |
2N6427 |
NPN Darlington transistor |
Philips |
72 |
2N6427 |
NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR |
Samsung Electronic |
73 |
2N6427RLRA |
Small Signal Darlington NPN |
ON Semiconductor |
74 |
2N6427_D26Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
75 |
2N6427_D27Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
76 |
2N6427_D75Z |
NPN Darlington Transistor |
Fairchild Semiconductor |
77 |
2N6428 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
78 |
2N6428 |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 Sleeve |
New Jersey Semiconductor |
79 |
2N6428 |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
80 |
2N6428 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
81 |
2N6428A |
Trans GP BJT NPN 50V 0.2A 3-Pin TO-92 |
New Jersey Semiconductor |
82 |
2N6428A |
NPN EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
83 |
2N6428A |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
84 |
2N643 |
Germanium PNP Transistor |
Motorola |
85 |
2N6430 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
86 |
2N6430 |
0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE. |
Continental Device India Limited |
87 |
2N6430 |
Trans GP BJT NPN 200V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
88 |
2N6431 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
89 |
2N6431 |
Trans GP BJT NPN 300V 0.1A 3-Pin TO-18 Box |
New Jersey Semiconductor |
90 |
2N6432 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
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