No. |
Part Name |
Description |
Manufacturer |
121 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
122 |
2N3375 |
RF transistor |
Texas Instruments |
123 |
2N3376 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
124 |
2N3377 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
125 |
2N3378 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
126 |
2N3379 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
127 |
2N337A |
Silicon NPN Transistor |
Motorola |
128 |
2N4337 |
Reverse Blocking Triode Thyristor-SCR |
Transitron Electronic |
129 |
2N5337 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
130 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
131 |
2N5337 |
Silicon NPN Transistor |
Motorola |
132 |
2N5337 |
Trans GP BJT NPN 80V 5A 3-Pin TO-39 Box |
New Jersey Semiconductor |
133 |
2N5337 |
Silicon NPN power transistor, TO-5 package |
Silicon Transistor Corporation |
134 |
2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE |
SemeLAB |
135 |
2SA1337 |
Silicon PNP Transistor |
Hitachi Semiconductor |
136 |
2SA1337 |
Silicon PNP Epitaxial |
Hitachi Semiconductor |
137 |
2SA1337 |
Transistors>Amplifiers/Bipolar |
Renesas |
138 |
2SB337 |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
139 |
2SB337 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
140 |
2SB337 |
GERMANIUM PNP ALLOYED JUNCTION AUDIO FREQUENCY POWER OUTPUT |
Unknow |
141 |
2SB337H |
Germanium PNP Alloyed Junction Transistor, intended for use in Audio Frequency Power Output |
Hitachi Semiconductor |
142 |
2SC2337 |
Silicon NPN Power Transistors TO-3 package |
Savantic |
143 |
2SC3374 |
VHF AMPLIFIER VHF TV TUNER RF AMPLIFIER |
Hitachi Semiconductor |
144 |
2SC3376 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
145 |
2SC3377 |
Epitaxial Planar NPN Silicon Transistor |
ROHM |
146 |
2SC3379 |
MITSUBISHI RF POWER TRANSISTOR |
Mitsubishi Electric Corporation |
147 |
2SC5337 |
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
NEC |
148 |
2SC5337-T1 |
New power mini(a product with gain improved of 2SC4536) |
NEC |
149 |
2SD2337 |
Silicon NPN Transistor |
Hitachi Semiconductor |
150 |
2SD2337 |
Silicon NPN Triple Diffused |
Hitachi Semiconductor |
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