| No. |
Part Name |
Description |
Manufacturer |
| 241 |
BC337 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 242 |
BC337 |
0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 630 hFE |
Continental Device India Limited |
| 243 |
BC337 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 244 |
BC337 |
Switching and Amplifier Applications |
Fairchild Semiconductor |
| 245 |
BC337 |
Small Signal Transistors (NPN) |
General Semiconductor |
| 246 |
BC337 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
| 247 |
BC337 |
NPN Silicon AF Transistor |
Infineon |
| 248 |
BC337 |
NPN Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
| 249 |
BC337 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 250 |
BC337 |
Silicon NPN Epitaxial Planar AF Transistors |
IPRS Baneasa |
| 251 |
BC337 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 252 |
BC337 |
General Purpose Transistor |
Korea Electronics (KEC) |
| 253 |
BC337 |
Low frequency transistor |
mble |
| 254 |
BC337 |
Low frequency transistor |
mble |
| 255 |
BC337 |
Low frequency transistor |
mble |
| 256 |
BC337 |
NPN SILICON AF MEDIUM POWER TRANSISTORS |
Micro Electronics |
| 257 |
BC337 |
NPN silicon epitaxial planar transistor |
Mikroelektronikai Vallalat |
| 258 |
BC337 |
Amplifier Transistor |
Motorola |
| 259 |
BC337 |
Silicon n-p-n medium power transistor |
Mullard |
| 260 |
BC337 |
N-P-N Silicon Planar Epitaxial Transistor |
Mullard |
| 261 |
BC337 |
NPN Medium Power Transistor |
National Semiconductor |
| 262 |
BC337 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 263 |
BC337 |
NPN general purpose transistor |
Philips |
| 264 |
BC337 |
NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 265 |
BC337 |
NPN silicon transistor, audio amplification and general purpose |
SESCOSEM |
| 266 |
BC337 |
Transistor NPN |
Siemens |
| 267 |
BC337 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 268 |
BC337 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 269 |
BC337 |
Tranzystor ma�ej cz�stotliwo�ci ma�ej mocy |
Ultra CEMI |
| 270 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
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