No. |
Part Name |
Description |
Manufacturer |
121 |
2N681 |
25A silicon controlled rectifier. Vrsom 35V. |
General Electric Solid State |
122 |
2N697A |
Trans GP BJT NPN 35V 3-Pin TO-39 Box |
New Jersey Semiconductor |
123 |
2SA715 |
Trans GP BJT PNP 35V 2.5A 3-Pin TO-126 Mod |
New Jersey Semiconductor |
124 |
2SA882 |
Trans GP BJT PNP 35V 1A 3-Pin TO-126B-A1 |
New Jersey Semiconductor |
125 |
2SB632 |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
126 |
2SB632K |
PNP Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
127 |
2SC838 |
Transistor. FM radio RF amp, mix. conv, osc, IF amp . Collector-base voltage Vcbo = 35V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 4V. Collector dissipation Pc(max) = 250mW. Collector current Ic = 30mA. |
USHA India LTD |
128 |
2SD612 |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
129 |
2SD612K |
NPN Epitaxial Planar Silicon Transistor 25V/35V, 2A Low-Frequency Power Amplifier Applications |
SANYO |
130 |
300CNQ035 |
35V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
131 |
301CNQ035 |
35V 300A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
132 |
30CPQ035 |
35V 30A Schottky Common Cathode Diode in a TO-247AC package |
International Rectifier |
133 |
30CTQ035 |
35V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
134 |
30CTQ035-1 |
35V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
135 |
30CTQ035S |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
136 |
30CTQ035STRL |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
137 |
30CTQ035STRR |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
138 |
30FQ030 |
Diode Schottky 35V 30A 2-Pin DO-4 |
New Jersey Semiconductor |
139 |
30FQ035 |
V(rrm): 35V; 30A schottky power rectifier |
International Rectifier |
140 |
35CGQ150 |
35V 150A Hi-Rel Schottky Common Cathode Diode in a TO-254AA package |
International Rectifier |
141 |
35GQ100 |
35V 100A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
142 |
35GQ150 |
35V 150A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
143 |
35SGQ030 |
35V 30A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
144 |
35SGQ045 |
35V 45A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
145 |
35SGQ060 |
35V 60A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
146 |
3N211 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
147 |
3N212 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
148 |
3N213 |
Trans MOSFET N-CH 35V |
New Jersey Semiconductor |
149 |
400CMQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Isolated package |
International Rectifier |
150 |
400CNQ035 |
35V 400A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
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