| No. |
Part Name |
Description |
Manufacturer |
| 91 |
224CNQ035 |
35V 220A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package |
International Rectifier |
| 92 |
240NQ035 |
35V 240A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 93 |
241NQ035 |
35V 240A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 94 |
249NQ135 |
135V 240A Schottky Discrete Diode in a D-67 HALF-Pak package |
International Rectifier |
| 95 |
25CTQ035 |
35V 30A Schottky Common Cathode Diode in a TO-220AB package |
International Rectifier |
| 96 |
25CTQ035-1 |
35V 30A Schottky Common Cathode Diode in a TO-262 package |
International Rectifier |
| 97 |
25CTQ035S |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 98 |
25CTQ035STRL |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 99 |
25CTQ035STRR |
35V 30A Schottky Common Cathode Diode in a D2-Pak package |
International Rectifier |
| 100 |
25GQ045 |
35V 45A Hi-Rel Schottky Discrete Diode in a TO-254AA package |
International Rectifier |
| 101 |
2N2800 |
Trans GP BJT PNP 35V 0.8A |
New Jersey Semiconductor |
| 102 |
2N2801 |
Trans GP BJT PNP 35V 0.8A |
New Jersey Semiconductor |
| 103 |
2N2944 |
Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
New Jersey Semiconductor |
| 104 |
2N2945 |
Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
New Jersey Semiconductor |
| 105 |
2N2946 |
Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
New Jersey Semiconductor |
| 106 |
2N2946A |
Trans GP BJT PNP 35V 0.1A 3-Pin TO-46 |
New Jersey Semiconductor |
| 107 |
2N3133 |
Trans GP BJT NPN 35V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 108 |
2N3134 |
Trans GP BJT NPN 35V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 109 |
2N3137 |
Trans GP BJT NPN 35V 3-Pin TO-18 Box |
New Jersey Semiconductor |
| 110 |
2N4416A |
Trans JFET N-CH 35V 15mA 3-Pin TO-72 |
New Jersey Semiconductor |
| 111 |
2N4429 |
Trans GP BJT NPN 35V 0.425A 4-Pin TO-117A |
New Jersey Semiconductor |
| 112 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 113 |
2N5641 |
Trans GP BJT NPN 35V 1A 4-Pin Style M135 |
New Jersey Semiconductor |
| 114 |
2N5641 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 15W; VHF power transistor |
SGS Thomson Microelectronics |
| 115 |
2N5642 |
V(ceo): 35V; V(cb): 65V; V(eb): 4V; 3A; 30W; NPN silicon RF power transistor |
Motorola |
| 116 |
2N5642 |
Trans GP BJT NPN 35V 3A 4-Pin Style M135 |
New Jersey Semiconductor |
| 117 |
2N5642 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 30W; VHF power transistor |
SGS Thomson Microelectronics |
| 118 |
2N5643 |
Trans GP BJT NPN 35V 5A 4-Pin Style M135 |
New Jersey Semiconductor |
| 119 |
2N5643 |
V(cbo): 65V; V(ceo): 35V; V(ebo): 4V; 60W; VHF power transistor |
SGS Thomson Microelectronics |
| 120 |
2N6659 |
Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD |
New Jersey Semiconductor |
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