No. |
Part Name |
Description |
Manufacturer |
121 |
2N3900A |
Silicon NPN Transistor |
Motorola |
122 |
2N3900A |
NPN Transistor - Low level AMPS |
National Semiconductor |
123 |
2N3901 |
Silicon NPN Transistor |
Motorola |
124 |
2N3901 |
NPN Transistor - Low level AMPS |
National Semiconductor |
125 |
2N3902 |
HIGH VOLTAGE NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
126 |
2N3902 |
NPN Transistor |
Microsemi |
127 |
2N3902 |
3.5A power, high voltage, NPN silicon transistor 100W |
Motorola |
128 |
2N3902 |
Silicon NPN Transistor |
Motorola |
129 |
2N3902 |
Trans GP BJT NPN 400V 3.5A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
130 |
2N3902 |
Silicon NPN Power Transistor, TO-3 (cont d) package |
Silicon Transistor Corporation |
131 |
2N3903 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
132 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
133 |
2N3903 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
134 |
2N3903 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
135 |
2N3903 |
General purpose NPN transistor |
FERRANTI |
136 |
2N3903 |
Low Noise NPN Transistor |
FERRANTI |
137 |
2N3903 |
Switching NPN transistor |
FERRANTI |
138 |
2N3903 |
Planar epitaxial NPN silicon transistor. 40V, 200mA. |
General Electric Solid State |
139 |
2N3903 |
NPN Silicon Epitaxial Planar Transistor |
Honey Technology |
140 |
2N3903 |
NPN silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
141 |
2N3903 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
142 |
2N3903 |
NPN silicon transistor |
Motorola |
143 |
2N3903 |
Silicon NPN Transistor |
Motorola |
144 |
2N3903 |
NPN Transistor - General Purpose AMPS and Switches |
National Semiconductor |
145 |
2N3903 |
NPN Silicon Transistor |
NEC |
146 |
2N3903 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
147 |
2N3903 |
npn epitaxial silicon transistor |
Samsung Electronic |
148 |
2N3903 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
149 |
2N3903 |
Silicon NPN Epitaxial transistor (PCT Process) |
TOSHIBA |
150 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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