| No. |
Part Name |
Description |
Manufacturer |
| 211 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 212 |
2N3904ZL1 |
General Purpose Transistors |
ON Semiconductor |
| 213 |
2N3904_D10Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 214 |
2N3904_D28Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 215 |
2N3904_D81Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 216 |
2N3904_J05Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 217 |
2N3904_J18Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 218 |
2N3904_J25Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 219 |
2N3904_J61Z |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 220 |
2N3905 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 221 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 222 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 223 |
2N3905 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 224 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 225 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 226 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 227 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 228 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 229 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 230 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 231 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 232 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 233 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 234 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 235 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 236 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 237 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
| 238 |
2N3905BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 239 |
2N3905TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 240 |
2N3905TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| | | |
