No. |
Part Name |
Description |
Manufacturer |
121 |
1N5523C |
Diode Zener Single 5.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
122 |
1N5523D |
Diode Zener Single 5.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
123 |
1N5524 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±20% tolerance |
Motorola |
124 |
1N5524 |
Diode Zener Single 5.6V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
125 |
1N5524A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±10% tolerance |
Motorola |
126 |
1N5524A |
Diode Zener Single 5.6V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
127 |
1N5524B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 5.6V ±5% tolerance |
Motorola |
128 |
1N5524B |
Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
129 |
1N5524C |
Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
130 |
1N5524D |
Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
131 |
1N5525 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±20% tolerance |
Motorola |
132 |
1N5525 |
Diode Zener Single 6.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
133 |
1N5525A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±10% tolerance |
Motorola |
134 |
1N5525A |
Diode Zener Single 6.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
135 |
1N5525B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.2V ±5% tolerance |
Motorola |
136 |
1N5525B |
Diode Zener Single 6.2V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
137 |
1N5525C |
Diode Zener Single 6.2V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
138 |
1N5525D |
Diode Zener Single 6.2V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
139 |
1N5526 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±20% tolerance |
Motorola |
140 |
1N5526 |
Diode Zener Single 6.8V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
141 |
1N5526A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±10% tolerance |
Motorola |
142 |
1N5526A |
Diode Zener Single 6.8V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
143 |
1N5526B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 6.8V ±5% tolerance |
Motorola |
144 |
1N5526B |
Diode Zener Single 6.8V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
145 |
1N5526C |
Diode Zener Single 6.8V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
146 |
1N5526D |
Diode Zener Single 6.8V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
147 |
1N5527 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±20% tolerance |
Motorola |
148 |
1N5527 |
Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
149 |
1N5527A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±10% tolerance |
Motorola |
150 |
1N5527A |
Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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