| No. |
Part Name |
Description |
Manufacturer |
| 151 |
1N5527B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 7.5V ±5% tolerance |
Motorola |
| 152 |
1N5527B |
Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 153 |
1N5527C |
Diode Zener Single 7.5V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 154 |
1N5527D |
Diode Zener Single 7.5V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 155 |
1N5528 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 8.2V ±20% tolerance |
Motorola |
| 156 |
1N5528 |
Diode Zener Single 8.2V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 157 |
1N5528A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 8.2V ±10% tolerance |
Motorola |
| 158 |
1N5528A |
Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 159 |
1N5528B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 8.2V ±5% tolerance |
Motorola |
| 160 |
1N5528B |
Diode Zener Single 8.2V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 161 |
1N5528C |
Diode Zener Single 8.2V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 162 |
1N5528D |
Diode Zener Single 8.2V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 163 |
1N5529 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±20% tolerance |
Motorola |
| 164 |
1N5529 |
Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 165 |
1N5529A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±10% tolerance |
Motorola |
| 166 |
1N5529A |
Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 167 |
1N5529B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±5% tolerance |
Motorola |
| 168 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 169 |
1N5529C |
Diode Zener Single 9.1V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 170 |
1N5529D |
Diode Zener Single 9.1V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 171 |
1N5530 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 10V ±20% tolerance |
Motorola |
| 172 |
1N5530 |
Diode Zener Single 10V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 173 |
1N5530A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 10V ±10% tolerance |
Motorola |
| 174 |
1N5530A |
Diode Zener Single 10V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 175 |
1N5530B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 10V ±5% tolerance |
Motorola |
| 176 |
1N5530B |
Diode Zener Single 10V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 177 |
1N5530C |
Diode Zener Single 10V 2% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 178 |
1N5530D |
Diode Zener Single 10V 1% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 179 |
1N5531 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 11V ±20% tolerance |
Motorola |
| 180 |
1N5531 |
Diode Zener Single 11V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
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