No. |
Part Name |
Description |
Manufacturer |
121 |
1V250 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 390 V @ 1mA DC test current. |
NTE Electronics |
122 |
1V275 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 430 V @ 1mA DC test current. |
NTE Electronics |
123 |
1V300 |
Metal oxide varistor. Case diameter 8.5 mm. Nominal varistor voltage 470 V @ 1mA DC test current. |
NTE Electronics |
124 |
2N1302 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
125 |
2N1303 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
126 |
2N1304 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
127 |
2N1305 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
128 |
2N1306 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
129 |
2N1307 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
130 |
2N1308 |
NPN Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
131 |
2N1309 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
132 |
2N2993 |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package |
SemeLAB |
133 |
2N404 |
PNP Germanium RF Alloy Transistor in TO5 metal case |
Newmarket Transistors NKT |
134 |
2N6621 |
25 V, 25 mA, NPN silicon RF broadband transistor |
Siemens |
135 |
2N7002L |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
136 |
2N7002LT1 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
137 |
2N7002LT1 |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
138 |
2N7002LT1-D |
Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT�23 |
ON Semiconductor |
139 |
2N7002LT1G |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
140 |
2N7002LT3 |
Small Signal MOSFET 115 mAmps, 60 Volts |
Leshan Radio Company |
141 |
2N7002LT3 |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
142 |
2N7002LT3G |
Small Signal MOSFET 115 mA, 60 Volts |
ON Semiconductor |
143 |
2S304A |
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. |
SemeLAB |
144 |
33120A |
Function / Arbitrary Waveform Generator, 15 MHz |
Agilent (Hewlett-Packard) |
145 |
3EZ100D |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. |
Jinan Gude Electronic Device |
146 |
3EZ100D1 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. |
Jinan Gude Electronic Device |
147 |
3EZ100D10 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. |
Jinan Gude Electronic Device |
148 |
3EZ100D2 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. |
Jinan Gude Electronic Device |
149 |
3EZ100D3 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. |
Jinan Gude Electronic Device |
150 |
3EZ100D4 |
3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. |
Jinan Gude Electronic Device |
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