DatasheetCatalog
  |   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to: 1N 2N 2SA 2SC 74 AD BA BC BD BF BU CXA HCF IRF KA KIA LA LM MC NE ST STK TDA TL UA
LM317 LM339 MAX232 NE555 LM324 8051 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148

Datasheets for 5 M

Datasheets found :: 8306
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |
No. Part Name Description Manufacturer
151 2N3632 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
152 2N3924 Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage VALVO
153 2N3926 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
154 2N3927 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
155 2N404 PNP Germanium RF Alloy Transistor in TO5 metal case Newmarket Transistors NKT
156 2N4427 Silicon NPN planar epitaxial transistor for driver stages in 175 MHz and 470 MHz transmitters at 12 V supply voltage VALVO
157 2N6621 25 V, 25 mA, NPN silicon RF broadband transistor Siemens
158 2N7002L Small Signal MOSFET 115 mA, 60 Volts ON Semiconductor
159 2N7002LT1 Small Signal MOSFET 115 mAmps, 60 Volts Leshan Radio Company
160 2N7002LT1 Small Signal MOSFET 115 mA, 60 Volts ON Semiconductor
161 2N7002LT1-D Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT�23 ON Semiconductor
162 2N7002LT1G Small Signal MOSFET 115 mA, 60 Volts ON Semiconductor
163 2N7002LT3 Small Signal MOSFET 115 mAmps, 60 Volts Leshan Radio Company
164 2N7002LT3 Small Signal MOSFET 115 mA, 60 Volts ON Semiconductor
165 2N7002LT3G Small Signal MOSFET 115 mA, 60 Volts ON Semiconductor
166 2S304A Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. SemeLAB
167 33120A Function / Arbitrary Waveform Generator, 15 MHz Agilent (Hewlett-Packard)
168 394-01 Motorola case, dimensions, similar with .25 MRA Motorola
169 3EZ100D 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-20% tolerance. Jinan Gude Electronic Device
170 3EZ100D1 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-1% tolerance. Jinan Gude Electronic Device
171 3EZ100D10 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-10% tolerance. Jinan Gude Electronic Device
172 3EZ100D2 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-2% tolerance. Jinan Gude Electronic Device
173 3EZ100D3 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-3% tolerance. Jinan Gude Electronic Device
174 3EZ100D4 3 W, silicon zener diode. Nominal voltage 100 V, current 7.5 mA, +-4% tolerance. Jinan Gude Electronic Device
175 40972 175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers RCA Solid State
176 40973 175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers RCA Solid State
177 40974 175 MHz Silicon NPN Overlay Transistor for High-Power VHF Amplifiers RCA Solid State
178 49720E 915 MHz Ceramic Band-Pass Filter Skyworks Solutions
179 49720E-TR 915 MHz Ceramic Band-Pass Filter Skyworks Solutions
180 5962-0150601HXA Dual Channel, 14-Bit, 65 MSPS A/D Converter with Analog Input Signal Conditioning Analog Devices


Datasheets found :: 8306
Page: | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 |



© 2024 - www Datasheet Catalog com