Datasheets for 517

Datasheets found :: 2142

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No.	Part Name	Description	Manufacturer
121	2N5179	NPN SILICON PLANAR TRANSISTOR	Boca Semiconductor Corporation
122	2N5179	Leaded Small Signal Transistor General Purpose	Central Semiconductor
123	2N5179	0.200W General Purpose NPN Metal Can Transistor. 12V Vceo, 0.050A Ic, 25 - 250 hFE.	Continental Device India Limited
124	2N5179	NPN SILICON RF SMALL SIGNAL TRANSISTOR	Micro Electronics
125	2N5179	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS	Microsemi
126	2N5179	NPN silicon RF high frequency transistor 4.5dB - 200MHz	Motorola
127	2N5179	Silicon NPN Transistor	Motorola
128	2N5179	NPN Transistor - RF AMPS and Oscillator	National Semiconductor
129	2N5179	Trans GP BJT NPN 12V 0.05A 4-Pin TO-72	New Jersey Semiconductor
130	2N5179	Silicon NPN Epitaxial Planar RF Transistor for UHF Applications in Military Communications and Industrial Equipment	RCA Solid State
131	2N5179	Silicon NPN transistor, VHF-UHF amplification and oscillation	SESCOSEM
132	2N5179	TRANSISTOR	SGS Thomson Microelectronics
133	2N5179	Epitaxial planar NPN transistor intended for low-noise tuned-amplifier and converter applications up to 500MHz	SGS-ATES
134	2N5179	Transistor, RF-IF amplifiers/oscillators	SGS-ATES
135	2N5179	VHF/UHF AMPLIFIER	ST Microelectronics
136	2N5179	RF transistor	Texas Instruments
137	2N5517	DUAL N CHANNEL JFET LOW NOISE AMPLIFIER	Intersil
138	2N5517	N-Channel Junction FET (Field-Effect Transistor)	Motorola
139	2N5517	N-Channel FETs - low frequency - low noise dual JFETs	National Semiconductor
140	2N5517	DUAL N-CHANNEL FETS	New Jersey Semiconductor
141	2N6517	Leaded Small Signal Transistor General Purpose	Central Semiconductor
142	2N6517	0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE	Continental Device India Limited
143	2N6517	NPN Epitaxial Silicon Transistor - High Voltage Transistor	Fairchild Semiconductor
144	2N6517	Ic=500mA, Vce=10V transistor	MCC
145	2N6517	High Voltage Transistor 625mW	Micro Commercial Components
146	2N6517	High voltage NPN transistor	Motorola
147	2N6517	High Voltage Transistors	ON Semiconductor
148	2N6517	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
149	2N6517	High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.	USHA India LTD
150	2N6517	NPN SILICON PLANAR MEDIUM POWER TRANSISTOR	Zetex Semiconductors

Datasheets found :: 2142

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