No. |
Part Name |
Description |
Manufacturer |
151 |
2N6517BU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
152 |
2N6517CBU |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
153 |
2N6517CTA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
154 |
2N6517RLRA |
High Voltage Transistors |
ON Semiconductor |
155 |
2N6517RLRP |
High Voltage Transistors |
ON Semiconductor |
156 |
2N6517TA |
NPN Epitaxial Silicon Transistor |
Fairchild Semiconductor |
157 |
2SB1517 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
158 |
2SB1517 |
TRANSISTORS TO 92L TO-92LS MRT |
ROHM |
159 |
2SC2517 |
Silicon transistor |
NEC |
160 |
2SC2517 |
Silicon NPN Power Transistors TO-220C package |
Savantic |
161 |
2SC2517-S |
Silicon transistor |
NEC |
162 |
2SC2517-Z |
Silicon transistor |
NEC |
163 |
2SC4517 |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
Sanken |
164 |
2SC4517 |
Silicon NPN Power Transistors TO-220F package |
Savantic |
165 |
2SC4517A |
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
Sanken |
166 |
2SC4517A |
Silicon NPN Power Transistors TO-220F package |
Savantic |
167 |
2SC517 |
Radio Frequency Transistor specification table |
TOSHIBA |
168 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
169 |
2SC5172 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS |
TOSHIBA |
170 |
2SC5173 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV HORIZONTAL DRIVER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS |
TOSHIBA |
171 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
172 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
173 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
174 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
175 |
2SC5177-T1 |
High fT, high gain transistor |
NEC |
176 |
2SC5177-T2 |
High fT, high gain transistor |
NEC |
177 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
178 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
179 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
180 |
2SC5178R |
High fT, high gain transistor |
NEC |
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