| No. |
Part Name |
Description |
Manufacturer |
| 121 |
1N5299 |
Current Limiter Diode |
Microsemi |
| 122 |
1N5299 |
Field-effect current regulator diode |
Motorola |
| 123 |
1N5299 |
CURRENT REGULATOR DIODES |
Motorola |
| 124 |
1N5299-1 |
CURRENT REGULATOR DIODES |
Compensated Devices Incorporated |
| 125 |
1N5299-1 |
Current Limiter Diode |
Microsemi |
| 126 |
1N5299-1E3 |
|
Microsemi |
| 127 |
1N5299UR-1 |
Current Limiter Diode |
Microsemi |
| 128 |
1N5299UR-1E3 |
|
Microsemi |
| 129 |
1N5529 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 130 |
1N5529 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 131 |
1N5529 |
Low Voltage Avalanche Zener |
Microsemi |
| 132 |
1N5529 |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±20% tolerance |
Motorola |
| 133 |
1N5529 |
Diode Zener Single 9.1V 20% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 134 |
1N5529A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 135 |
1N5529A |
Low Voltage Avalanche Zener |
Microsemi |
| 136 |
1N5529A |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±10% tolerance |
Motorola |
| 137 |
1N5529A |
Diode Zener Single 9.1V 10% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 138 |
1N5529A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 139 |
1N5529A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 140 |
1N5529AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 141 |
1N5529AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 142 |
1N5529B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 143 |
1N5529B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 9.1 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 144 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 145 |
1N5529B |
Low Voltage Avalanche Zener |
Microsemi |
| 146 |
1N5529B |
Low voltage avalanche silicon oxide passivated zener regulator diode 400mW 9.1V ±5% tolerance |
Motorola |
| 147 |
1N5529B |
Diode Zener Single 9.1V 5% 400mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 148 |
1N5529B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 149 |
1N5529B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 150 |
1N5529B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
