No. |
Part Name |
Description |
Manufacturer |
211 |
2N5296 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
212 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
213 |
2N5296 |
Silicon N-P-N transistor. 60V, 36W. |
General Electric Solid State |
214 |
2N5296 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
215 |
2N5296 |
Silicon NPN Transistor |
Motorola |
216 |
2N5296 |
Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
217 |
2N5296 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
218 |
2N5296 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM133 |
SESCOSEM |
219 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
220 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
221 |
2N5297 |
Silicon NPN Transistor |
Motorola |
222 |
2N5297 |
Trans GP BJT NPN 40V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
223 |
2N5297 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
224 |
2N5298 |
NPN SILICON TRANSISTOR |
Central Semiconductor |
225 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
226 |
2N5298 |
Silicon N-P-N transistor. 80V, 36W. |
General Electric Solid State |
227 |
2N5298 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
228 |
2N5298 |
Silicon NPN Transistor |
Motorola |
229 |
2N5298 |
Trans GP BJT NPN 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
230 |
2N5298 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
231 |
2N5298 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary ESM134 |
SESCOSEM |
232 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
233 |
2N5529 |
Silicon NPN Transistor |
Motorola |
234 |
2SA1529 |
PNP Epitaxial Planar Silicon Transistors Switching Applications (with Bias Resistance) |
SANYO |
235 |
2SB529 |
SILICON PNP EPITAXIAL PLANAR TRANSISTOR |
Unknow |
236 |
2SC4529 |
Silicon NPN Epitaxial VHF Wide Brand Amplifier |
Hitachi Semiconductor |
237 |
2SC5291 |
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications |
SANYO |
238 |
2SC5294 |
For horizontal deflection output |
Panasonic |
239 |
2SC5294A |
For horizontal deflection output |
Panasonic |
240 |
2SC5295 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
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