| No. |
Part Name |
Description |
Manufacturer |
| 121 |
5KP130 |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 122 |
5KP130A |
130.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 123 |
5KP150 |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 124 |
5KP150A |
150.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 125 |
5KP160 |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 126 |
5KP160A |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 127 |
5KP170 |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 128 |
5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 129 |
5KP180 |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 130 |
5KP180A |
180.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 131 |
AL5811 |
60V LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER |
Diodes |
| 132 |
AL5811FF-7 |
60V LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER |
Diodes |
| 133 |
AL5811MP-13 |
60V LINEAR 75mA ADJUSTABLE CURRENT LED DRIVER |
Diodes |
| 134 |
AP3616 |
SIXTEEN-CHANNEL, 75mA CURRENT SINK WITH CURRENT MATCH |
Diodes |
| 135 |
AT49BV1604-90CI |
16-Megabit(1M x 16 or 2M x 8) 3-volt only flash memory, 25mA active, 0.01mA standby |
Atmel |
| 136 |
AT49LV080-12TC |
8-Megabit (1M x 8) single 2.7-volt battery-voltage flash memory, 25mA active, 0.05mA standby |
Atmel |
| 137 |
AT49LV080-12TC |
8-Megabit (1M x 8) single 2.7-volt battery-voltage flash memory, 25mA active, 0.05mA standby |
Atmel |
| 138 |
AT49LV080T-12TC |
8-Megabit (1M x 8) single 2.7-volt battery-voltage flash memory, 25mA active, 0.05mA standby |
Atmel |
| 139 |
AT49LV080T-12TC |
8-Megabit (1M x 8) single 2.7-volt battery-voltage flash memory, 25mA active, 0.05mA standby |
Atmel |
| 140 |
BFP181 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 141 |
BFP181R |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 142 |
BFP181W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA) |
Siemens |
| 143 |
BFR35 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 144 |
BFR35AP |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 0.5mA to 20mA) |
Siemens |
| 145 |
BS616LV8022AC |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
| 146 |
BS616LV8022AI |
70/100ns 20-45mA 2.4-5.5V very low power/voltage CMOS SRAM 512K x 16 or 1M x 8bit switchable |
Brilliance Semiconductor |
| 147 |
BT134-D |
600V Vdrm 4A Triac, 1.7V Peak On-State Voltage, 0.5mA Repetitive Peak Off-State Current |
SemiWell Semiconductor |
| 148 |
CR075 |
Diode Current Reg. 100V 0.825mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 149 |
CR150 |
Diode Current Reg. 100V 1.65mA 2-Pin TO-18 |
New Jersey Semiconductor |
| 150 |
CS4161 |
85mA Dual H-Bridge Odometer Driver with Divide by Select and UVLO |
Cherry Semiconductor |
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