| No. |
Part Name |
Description |
Manufacturer |
| 61 |
20KW172A |
172.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 62 |
20KW180 |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 63 |
20KW180A |
180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 64 |
20KW192 |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 65 |
20KW192A |
192.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 66 |
20KW204 |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 67 |
20KW204A |
204.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 68 |
20KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 69 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 70 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 71 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 72 |
20KW240 |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 73 |
20KW240A |
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 74 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 75 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 76 |
20KW280 |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 77 |
20KW280A |
280.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 78 |
20KW300 |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 79 |
20KW300A |
300.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 80 |
2N2608 |
Trans JFET P-CH 5mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 81 |
2N4092 |
Trans JFET N-CH 40V 15mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 82 |
2N4092A |
Trans JFET N-CH 40V 15mA 3-Pin TO-18 |
New Jersey Semiconductor |
| 83 |
2N4416A |
Trans JFET N-CH 35V 15mA 3-Pin TO-72 |
New Jersey Semiconductor |
| 84 |
2SC4450 |
NPN Triple Diffused Planar Silicon Transistor 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 85 |
2SC4451 |
NPN Triple Diffused Planar Silicon Transistor 1500V/15mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 86 |
2SC4637LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA High-Voltage Amplifier, High-Voltage Switching Applications |
SANYO |
| 87 |
30KW102 |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 88 |
30KW102A |
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 89 |
30KW108 |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 90 |
30KW108A |
108.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
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