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Datasheets for 70 N

Datasheets found :: 412
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 LTI210UFTD 1000 V doubler 10-12.5 A forward current, 70 ns recovery time Voltage Multipliers
122 LTI210UFTP 1000 V positive center tap 20-25 A forward current, 70 ns recovery time Voltage Multipliers
123 LTI602UF 200 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
124 LTI602UFT 200 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
125 LTI606UF 600 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
126 LTI606UFT 600 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
127 LTI610UF 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
128 LTI610UFT 1000 V three phase bridge 30-40 A forward current, 70 ns recovery time Voltage Multipliers
129 MH25632BJ-7 Access time: 70 ns, 265K x 4 bit dynamic RAM Mitsubishi Electric Corporation
130 N28F001BN-B70 1-Mbit(128K x 8) boot block flash memory. Access speed 70 ns Intel
131 N28F001BN-T70 1-Mbit(128K x 8) boot block flash memory. Access speed 70 ns Intel
132 N28F020-70 2048(256 x 8) CMOS flash memory. Access speed 70 ns Intel
133 NMC27C010Q17 170 ns, Vcc=5V+/-5%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM National Semiconductor
134 NMC27C010Q170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM National Semiconductor
135 NMC27C010QE170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM National Semiconductor
136 NMC27C010QM170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM National Semiconductor
137 NMC27C1024Q17 170 ns, Vcc=5V+/-5%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
138 NMC27C1024Q170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
139 NMC27C1024QE170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
140 NMC27C1024QM170 170 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
141 NMC27C256Q17 170 ns, Vcc=5V+/-5%, 262,144-bit (32k x 8) UV erasable CMOS PROM National Semiconductor
142 NMC27C512AN17 170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM National Semiconductor
143 NMC27C512AN170 170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM National Semiconductor
144 NMC27C512ANE17 170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) one time programmable CMOS PROM National Semiconductor
145 NMC27C512ANE170 170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) one time programmable CMOS PROM National Semiconductor
146 NMC27C512AQ17 170 ns, Vcc=5V+/-5%, 524,288-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
147 NMC27C512AQ170 170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
148 NMC27C512AQE170 170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
149 NMC27C512AQM170 170 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM National Semiconductor
150 NX29F010-70PL 70 ns, 5 V, 1M-bit CMOS ultra-fast sectored flash memory NexFlash


Datasheets found :: 412
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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