No. |
Part Name |
Description |
Manufacturer |
61 |
3406UFB |
600 V three phase bridge 18-20 A forward current,70 ns recovery time |
Voltage Multipliers |
62 |
3410UFA |
1000 V three phase bridge 18-20 A forward current, 70 ns recovery time |
Voltage Multipliers |
63 |
3410UFB |
1000 V three phase bridge 18-20 A forward current,70 ns recovery time |
Voltage Multipliers |
64 |
3502UF |
200 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
65 |
3506UF |
600 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
66 |
3510UF |
1000 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
67 |
CY62137CV33LL-55BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
68 |
CY62137CV33LL-55BVI |
Very high speed: 55 ns and 70 ns |
Cypress |
69 |
CY62137CV33LL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
70 |
CY62137CVLL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
71 |
CY62137CVSL-70BAI |
Very high speed: 55 ns and 70 ns |
Cypress |
72 |
DD28F032SA-70 |
32-Mbit(2 Mbit x 16, 4 Mbit x 8) flashfile memory. Access speed 70 ns, Vcc = 5.0 V, 30 pF |
Intel |
73 |
DM54LS471J |
70 ns, (256 x 8) 2048-bit TTL PROM |
National Semiconductor |
74 |
DM77S184J |
70 ns, (2048 x 4) 8192-bit TTL PROM |
National Semiconductor |
75 |
DM77S185J |
70 ns, (2048 x 4) 8192-bit TTL PROM |
National Semiconductor |
76 |
DS1249AB-70 |
70 ns, Vcc=5V+/-5%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
77 |
DS1249AB-70-IND |
70 ns, Vcc=5V+/-5%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
78 |
DS1249Y-70 |
70 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
79 |
DS1249Y-70-IND |
70 ns, Vcc=5V+/-10%, 2048 K nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
80 |
DS1270AB-70-IND |
70 ns, Vcc=5V+/-5%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
81 |
DS1270Y-70-IND |
70 ns, Vcc=5V+/-10%, 16 M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
82 |
DS1330AB-70 |
70 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
83 |
DS1330AB-70-IND |
70 ns, Vcc=5V+/-5%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
84 |
DS1330Y-70 |
70 ns, Vcc=5V+/-10%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
85 |
DS1330Y-70-IND |
70 ns, Vcc=5V+/-10%, 256k nonvolatile SRAM with battery monitor |
MAXIM - Dallas Semiconductor |
86 |
DS2030AB-70 |
70 ns, 4.75 V to 5.25 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
87 |
DS2030Y-70 |
70 ns, 4.5 V to 5.5 V, rechargeable 256k nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
88 |
DS2045AB-70 |
70 ns, 4.75 to 5.25 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
89 |
DS2045Y-70 |
70 ns, 4.5 to 5.5 V, rechargeable 1M nonvolatile SRAM |
MAXIM - Dallas Semiconductor |
90 |
DT28F160S5-70 |
Word-wide FlashFile memory. 16 Mbit, access speed 70 ns |
Intel |
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