| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. |
Isahaya Electronics Corporation |
| 122 |
2SC5395 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 123 |
2SC5396 |
SILICON NPN EPITAXIAL TYPE TRANSISTOR |
Isahaya Electronics Corporation |
| 124 |
2SC5397 |
Silicon NPN epitaxial planar type |
Isahaya Electronics Corporation |
| 125 |
2SC5398 |
For Llow Frequency Amplifty Application Silicom NPN Epitaxial Type Micro(Frame type) |
Isahaya Electronics Corporation |
| 126 |
2SC5477 |
150mW SMD NPN transistor, maximum rating: 20V Vceo, 50mA Ic, 50 to (typ)148 hFE. High Frequency Amplification |
Isahaya Electronics Corporation |
| 127 |
2SC5482 |
FOR LOW FREQUENCY POWER AMPLIFY APPRICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 128 |
2SC5484 |
SILICON NPN TRANSISTOR |
Isahaya Electronics Corporation |
| 129 |
2SC5485 |
FOR HIGH CURRENT APPLICATION SILICON NPN EPITAXIAL TYPE MICRO |
Isahaya Electronics Corporation |
| 130 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 131 |
2SC5619 |
2SC5619 |
Isahaya Electronics Corporation |
| 132 |
2SC5620 |
For Low Frequency Amplify Application Sillcon Npn Epitaxial Type |
Isahaya Electronics Corporation |
| 133 |
2SC5621 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 134 |
2SC5625 |
SILICON EPITAXIAL |
Isahaya Electronics Corporation |
| 135 |
2SC5626 |
2SC5626 |
Isahaya Electronics Corporation |
| 136 |
2SC5636 |
FOR HIGH FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 137 |
2SC5804 |
SMALL-SIGNAL TRANSISTOR |
Isahaya Electronics Corporation |
| 138 |
2SC5807 |
SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 139 |
2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 140 |
2SC5815 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 141 |
2SC5816 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 142 |
2SC5817 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type |
Isahaya Electronics Corporation |
| 143 |
2SC5882 |
SILICON NPN EPITAXIAL TRANSISTOR |
Isahaya Electronics Corporation |
| 144 |
2SC5938 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 145 |
2SC5938A |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 146 |
2SC5938B |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE |
Isahaya Electronics Corporation |
| 147 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 148 |
2SD1447 |
900mW Lead frame NPN transistor, maximum rating: 25V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SB1035 |
Isahaya Electronics Corporation |
| 149 |
2SD1972 |
2W Lead frame NPN transistor, maximum rating: 60V Vceo, 3A Ic, 250 to 800 hFE. |
Isahaya Electronics Corporation |
| 150 |
2SD2156 |
Silicon NPN Triple-Diffused Planar Type |
Matsushita Electric Works(Nais) |
| | | |
