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Datasheets for A ELECTR

Datasheets found :: 7927
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No. Part Name Description Manufacturer
61 2SA1946 500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212 Isahaya Electronics Corporation
62 2SA1947 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Isahaya Electronics Corporation
63 2SA1948 SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
64 2SA1989 For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini Isahaya Electronics Corporation
65 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE MICRO Isahaya Electronics Corporation
66 2SA1995 450mW Lead frame PNP transistor, maximum rating: -50V Vceo, -100mA Ic, 120 to 560 hFE. Isahaya Electronics Corporation
67 2SA1998 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. Isahaya Electronics Corporation
68 2SA2002 600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 Isahaya Electronics Corporation
69 2SA2027 SILICON EPITAXIAL TRANSISTOR Isahaya Electronics Corporation
70 2SA2068 SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
71 2SA2068E SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
72 2SA2068F SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
73 2SA2068G SMALL-SIGNAL TRANSISTOR Isahaya Electronics Corporation
74 2SB1035 900mW Lead frame PNP transistor, maximum rating: -25V Vceo, -1A Ic, 55 to 300 hFE. Complementary 2SD1447 Isahaya Electronics Corporation
75 2SB1314 2W Lead frame PNP transistor, maximum rating: -60V Vceo, -3A Ic, 150 to 500 hFE. Isahaya Electronics Corporation
76 2SC3052 LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE Isahaya Electronics Corporation
77 2SC3053 150mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE. correspond 2SC710 Isahaya Electronics Corporation
78 2SC3198 Transistors Korea Electronics (KEC)
79 2SC3198L SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
80 2SC3200 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
81 2SC3201 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
82 2SC3202 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
83 2SC3202 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
84 2SC3203 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
85 2SC3206 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(PCT PROCESS) Korea Electronics (KEC)
86 2SC3242 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 Isahaya Electronics Corporation
87 2SC3242A 900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A Isahaya Electronics Corporation
88 2SC3243 900mW Lead frame NPN transistor, maximum rating: 60V Vceo, 1A Ic, 55 to 300 hFE. Complementary 2SA1283 Isahaya Electronics Corporation
89 2SC3244 900mW Lead frame NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1284 Isahaya Electronics Corporation
90 2SC3245 900mW Lead frame NPN transistor, maximum rating: 120V Vceo, 100mA Ic, 150 to 800 hFE. Complementary 2SA1285 Isahaya Electronics Corporation


Datasheets found :: 7927
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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