No. |
Part Name |
Description |
Manufacturer |
121 |
1N5540B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
122 |
1N5541B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
123 |
1N5541B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
124 |
1N5542B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
125 |
1N5542B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
126 |
1N5543B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
127 |
1N5543B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
128 |
1N5544B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
129 |
1N5544B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
130 |
1N5545B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
131 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
132 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
133 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
134 |
1N6819 |
LOW LEAKAGE CURRENT SCHOTTKY DIODE |
Microsemi |
135 |
1N941 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.088V |
Motorola |
136 |
1N941A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.181V |
Motorola |
137 |
1N941B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.239V |
Motorola |
138 |
1N942 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.044V |
Motorola |
139 |
1N942A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.090V |
Motorola |
140 |
1N942B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.120V |
Motorola |
141 |
1N943 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
142 |
1N943A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.036V |
Motorola |
143 |
1N943B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.047V |
Motorola |
144 |
1N944 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
145 |
1N944A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.018V |
Motorola |
146 |
1N944B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.024V |
Motorola |
147 |
1N945 |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.004V |
Motorola |
148 |
1N945A |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.009V |
Motorola |
149 |
1N945B |
Temperature-compensated silicon zener reference diode. 500mA, 11.7V. Max voltage change 0.012V |
Motorola |
150 |
20DK |
Heavy Duty High Voltage Capacitors |
Vishay |
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