No. |
Part Name |
Description |
Manufacturer |
61 |
15KTD33 |
Heavy Duty High Voltage Capacitors |
Vishay |
62 |
15KTT82 |
Heavy Duty High Voltage Capacitors |
Vishay |
63 |
1N3154 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.130 V. 500 W. |
Motorola |
64 |
1N3154A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.172 V. 500 W. |
Motorola |
65 |
1N3155 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.065 V. 500 W. |
Motorola |
66 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
67 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
68 |
1N3156A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.034 V. 500 W. |
Motorola |
69 |
1N3157A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.017 V. 500 W. |
Motorola |
70 |
1N3282 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 700V |
Motorola |
71 |
1N3283 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1050V |
Motorola |
72 |
1N3284 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1400V |
Motorola |
73 |
1N3285 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 1750V |
Motorola |
74 |
1N3286 |
Low-current 100mA silicon rectifier diode, high reverse-voltage capability 2100V |
Motorola |
75 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
76 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
77 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
78 |
1N5519B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
79 |
1N5519B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
80 |
1N5520B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
81 |
1N5520B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
82 |
1N5521B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
83 |
1N5521B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
84 |
1N5522B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
85 |
1N5522B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
86 |
1N5523B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
87 |
1N5523B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
88 |
1N5524B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
89 |
1N5524B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
90 |
1N5525B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
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