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Datasheets for AT

Datasheets found :: 5711
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 1N4620-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
122 1N4621 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
123 1N4621-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
124 1N4622 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
125 1N4622-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
126 1N4623 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
127 1N4623-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
128 1N4624 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
129 1N4624-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
130 1N4625 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
131 1N4625-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
132 1N4626 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
133 1N4626-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
134 1N4627 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
135 1N4627-1 LOW CURRENT OPERATION AT 250 uA Compensated Devices Incorporated
136 202AT-11 AT thermistor, 2KOhm SEMITEC
137 202AT-2 AT thermistor, 2KOhm SEMITEC
138 202AT-5-TR AT thermistor SEMITEC
139 203AT-2 AT thermistor, 20KOhm SEMITEC
140 203AT-5-TR AT thermistor SEMITEC
141 236 Board Level Power Semiconductor Heat Sinks Wakefield Thermal Solutions
142 24LC09 Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir Microchip
143 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
144 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
145 2N3375 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
146 2N3553 Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage VALVO
147 2N3632 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage VALVO
148 2N3866 Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage VALVO
149 2N3924 Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage VALVO
150 2N3926 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO


Datasheets found :: 5711
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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