No. |
Part Name |
Description |
Manufacturer |
121 |
1N4620-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
122 |
1N4621 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
123 |
1N4621-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
124 |
1N4622 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
125 |
1N4622-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
126 |
1N4623 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
127 |
1N4623-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
128 |
1N4624 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
129 |
1N4624-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
130 |
1N4625 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
131 |
1N4625-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
132 |
1N4626 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
133 |
1N4626-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
134 |
1N4627 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
135 |
1N4627-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
136 |
202AT-11 |
AT thermistor, 2KOhm |
SEMITEC |
137 |
202AT-2 |
AT thermistor, 2KOhm |
SEMITEC |
138 |
202AT-5-TR |
AT thermistor |
SEMITEC |
139 |
203AT-2 |
AT thermistor, 20KOhm |
SEMITEC |
140 |
203AT-5-TR |
AT thermistor |
SEMITEC |
141 |
236 |
Board Level Power Semiconductor Heat Sinks |
Wakefield Thermal Solutions |
142 |
24LC09 |
Note:This product has become 'Obsolete' and is no longer offered as a viable device.Please Consider 24LC08B InsteadThe 24LC09 is an 8-Kbit Electrically Erasable PROM (EEPROM) that is designed with a custom device address to meet the requir |
Microchip |
143 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
144 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
145 |
2N3375 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
146 |
2N3553 |
Silicon NPN planar epitaxial transistor for transmitter applications at 175 MHz with 28 V supply voltage |
VALVO |
147 |
2N3632 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 28 V supply voltage |
VALVO |
148 |
2N3866 |
Silicon NPN planar epitaxial transistor for driver stages in transmitters up to 400 MHz at 28 V supply voltage |
VALVO |
149 |
2N3924 |
Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage |
VALVO |
150 |
2N3926 |
Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage |
VALVO |
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