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Datasheets for AT

Datasheets found :: 5711
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No. Part Name Description Manufacturer
181 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
182 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
183 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
184 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
185 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
186 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
187 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
188 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
189 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
190 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
191 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Nexperia
192 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor NXP Semiconductors
193 2PB1424 20 V, 3 A PNP low VCEsat (BISS) transistor Philips
194 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Nexperia
195 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor NXP Semiconductors
196 2PD2150 20 V, 3 A NPN low VCEsat (BISS) transistor Philips
197 2SB1318 Darlington Transistor BUILT-IN DUMPER DIODE AT E-C NEC
198 2SD1579 Darlington transistor including a dumper diode at E-C NEC
199 3000 Silicon NPN common base transistor, high gain and efficiency, output power at frequencyes up to 3500MHz SGS Thomson Microelectronics
200 39K100 CPLDs at FPGA DensitiesTM Cypress
201 39K165 CPLDs at FPGA DensitiesTM Cypress
202 39K200 CPLDs at FPGA DensitiesTM Cypress
203 39K30 CPLDs at FPGA DensitiesTM Cypress
204 39K50 CPLDs at FPGA DensitiesTM Cypress
205 40MT160PA 1600V 3 Phase Bridge in a MTP package with flat pins International Rectifier
206 4J100-25 4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes ITT Semiconductors
207 4J100-5 4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes ITT Semiconductors
208 4J200-25 4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes ITT Semiconductors
209 4J200-5 4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes ITT Semiconductors
210 4J50-25 4-Layer Diode TOP-HAT Package-TYPE J, datasheet and application notes ITT Semiconductors


Datasheets found :: 5711
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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