No. |
Part Name |
Description |
Manufacturer |
121 |
80610-50 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
122 |
82729-30 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
123 |
82729-60 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
124 |
82731-1 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
125 |
82731-75 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
126 |
82931-55 |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
127 |
82931-55N |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
128 |
82931-55S |
High Power Silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
129 |
83135-3 |
Medium power silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
130 |
AD8353 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
131 |
AD8353-EVAL |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
132 |
AD8353ACP-R2 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
133 |
AD8353ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
134 |
AD8354 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
135 |
AD8354-EVAL |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
136 |
AD8354ACP-R2 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
137 |
AD8354ACP-REEL7 |
100 MHz - 2.7 GHz RF Gain Blocks, Silicon Bipolar Amplifiers |
Analog Devices |
138 |
ADA-4543 |
ADA-4543 · Silicon Bipolar Darlington Amplifier |
Agilent (Hewlett-Packard) |
139 |
ADA-4643 |
ADA-4643 · Silicon Bipolar Darlington Amplifier |
Agilent (Hewlett-Packard) |
140 |
ADA-4743 |
ADA-4743 · Silicon Bipolar Darlington Amplifier |
Agilent (Hewlett-Packard) |
141 |
AKBPC3502 |
35AMP controlled avalanche silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
142 |
AKBPC3502 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
143 |
AKBPC3503 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
144 |
AKBPC3504 |
35AMP controlled avalanche silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
145 |
AKBPC3504 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
146 |
AKBPC3505 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
147 |
AKBPC3506 |
35 AMP controlled avalanche silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
148 |
AKBPC3506 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
149 |
AKBPC3507 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
150 |
AKBPC3508 |
35 AMP controlled avalanche silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
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