| No. |
Part Name |
Description |
Manufacturer |
| 151 |
AKBPC3508 |
35 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 152 |
AKBPC602 |
6 AMP controlled avalanch silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 153 |
AKBPC602 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 154 |
AKBPC603 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 155 |
AKBPC604 |
6 AMP controlled avalanch silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 156 |
AKBPC604 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 157 |
AKBPC605 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 158 |
AKBPC606 |
6 AMP controlled avalanch silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 159 |
AKBPC606 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 160 |
AKBPC607 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 161 |
AKBPC608 |
6 AMP controlled avalanch silicon bridge rectifier |
COLLMER SEMICONDUCTOR INC |
| 162 |
AKBPC608 |
6 AMP CONTROLLED AVALANCHE SILICON BRIDGE RECTIFIER |
Fuji Electric |
| 163 |
AM0608-020 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz |
SGS Thomson Microelectronics |
| 164 |
AM0608-070 |
Silicon bipolar transistor optimized for pulsed applications in the 600-750MHz, avionics |
SGS Thomson Microelectronics |
| 165 |
AM0710-300 |
High Power 300W, refractory/gold metallized silicon bipolar device suitable for UHF avionics, radar and EW applications |
SGS Thomson Microelectronics |
| 166 |
AM1416-100 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 167 |
AM1416-200 |
High Power silicon bipolar NPN transistor designed for L-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 168 |
AM2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 169 |
AM3135-007 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 170 |
AM3135-014 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 171 |
AM3135-025 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 172 |
AM3135-035 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 173 |
AM3135-045 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 174 |
AM3135-25N |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 175 |
AM80610-018 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 620-960MHz |
SGS Thomson Microelectronics |
| 176 |
AM80610-050 |
High power, common base NPN silicon bipolar device optimized for CW operation in the 750-960MHz |
SGS Thomson Microelectronics |
| 177 |
AM82729-030 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 178 |
AM82729-060 |
High power silicon bipolar NPN transistor designed for S-Band radar pulsed output and driver applications |
SGS Thomson Microelectronics |
| 179 |
AM82731-001 |
Medium Power Silicon bipolar NPN transistor designed for S-Band radar pulsed driver applications |
SGS Thomson Microelectronics |
| 180 |
AM82731-075 |
High Power Silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
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