| No. |
Part Name |
Description |
Manufacturer |
| 121 |
KPC724 |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 122 |
KPC724A |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 123 |
KPC744 |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 124 |
KPC744A |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 125 |
KPC814 |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 126 |
KPC814A |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 127 |
KPC814L |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 128 |
KPC824 |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 129 |
KPC824A |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 130 |
KPC824L |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 131 |
KPC844 |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 132 |
KPC844A |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 133 |
KPC844L |
Photocoupler(These Photocouplers consist of two Gallium Arsenide Infrared Emitting) |
Kondenshi Corp |
| 134 |
LR4558 |
The LR4558 consists of two high performance operational amplifiers |
etc |
| 135 |
MMF1 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 136 |
MMF2 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 137 |
MMF3 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 138 |
MMF4 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 139 |
MMF5 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=300µAdc |
Motorola |
| 140 |
MMF6 |
Matched silicon N-Channel junction field-effect transistors consisting of two individual MFE2003 device types, Matched ID=750µAdc |
Motorola |
| 141 |
MOUNTING MODULES |
Application Note - Mounting considerations for Motorola RF power modules |
Motorola |
| 142 |
Mounting Techniques |
Thermal Considerations and Mounting Techniques |
Siliconix |
| 143 |
OSS9110-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 144 |
OSS9110-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 145 |
OSS9210-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 146 |
OSS9210-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 147 |
OSS9310-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 148 |
OSS9310-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 149 |
OSS9410-3 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
| 150 |
OSS9410-30 |
High Voltage device, the stacks consist of three to thirty rectifier diodes connected in series |
Mullard |
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