| No. |
Part Name |
Description |
Manufacturer |
| 121 |
AN373 |
TECHNICAL NOTE VERTICAL DEFLECTION CIRCUITS FOR TV & MONITOR |
SGS Thomson Microelectronics |
| 122 |
AT71200MCRER |
8M-pixel color image sensor. Full frame version standard image grade. Anti-reflective window. |
Atmel |
| 123 |
AT71200MCRHR |
8M-pixel color image sensor. Full frame version high image grade. Anti-reflective window. |
Atmel |
| 124 |
AT83C220KXXX-RDRIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 125 |
AT83C220KXXX-RDTIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 126 |
AT83C230KXXX-RARIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 127 |
AT83C230KXXX-RATIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 128 |
AT83C230KXXX-SIRIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 129 |
AT83C230KXXX-SISIM |
CardMan. Smart card interface. xxx - firmware version. |
Atmel |
| 130 |
BAR63 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 131 |
BAR63-03 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 132 |
BAR63-03W |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 133 |
BAR63-04 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 134 |
BAR63-04W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 135 |
BAR63-05 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 136 |
BAR63-05W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 137 |
BAR63-06 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 138 |
BAR63-06W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 139 |
BAR63-W |
Silicon PIN Diode (PIN diode for high speed switching of RF signal Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 140 |
BC237 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 141 |
BC238 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 142 |
BC239 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. |
USHA India LTD |
| 143 |
BC307 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 144 |
BC308 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 145 |
BC309 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = -100mA. |
USHA India LTD |
| 146 |
BC327 |
Transistor. Switching and amplifier applications. Collector-base voltage Vcbo = -50V. Collector-emitter voltage Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 625mW. Collector current Ic = -800mA. |
USHA India LTD |
| 147 |
BC337 |
Transistor. Switching and ampplifier applications. Suitable for AF-driver stagees and power output stages. Collector-base Vcbo = 50V. Collector-emitter Vceo= 45V. Emitter-base Vebo = 5V. Collector dissipation Pc = 625mW. Collector current |
USHA India LTD |
| 148 |
BQ24100 |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| 149 |
BQ24100RHL |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| 150 |
BQ24100RHLR |
bqSWITCHER(TM) Synchronous, Switch-Mode Li-Ion Charger w/ 2-A FET in QFN, 1-Cell, Standalone Version |
Texas Instruments |
| | | |
