| No. |
Part Name |
Description |
Manufacturer |
| 61 |
299-93-624-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 62 |
299-93-626-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 63 |
299-93-628-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 64 |
299-93-630-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 65 |
299-93-632-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 66 |
299-93-636-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 67 |
299-93-640-10-002 |
Dual-in-line sockets / right angle version Closed frame Solder tail |
Precid-Dip Durtal |
| 68 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 69 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 70 |
2N2535N3 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 71 |
2N2535N5 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 72 |
2N2540N3 |
400V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 73 |
2N2540N5 |
400V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 74 |
2N2540N8 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 75 |
2N6486 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 50V. |
General Electric Solid State |
| 76 |
2N6487 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 70V. |
General Electric Solid State |
| 77 |
2N6488 |
15A, 75W, silicon N-P-N epitaxial-base VERSAWATT transistor. 90V. |
General Electric Solid State |
| 78 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 79 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 80 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 81 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 82 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 83 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
| 84 |
2N7000 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 85 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 86 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
| 87 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 88 |
2N7002 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 89 |
2N7007 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 90 |
2N7008 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| | | |
