| No. |
Part Name |
Description |
Manufacturer |
| 121 |
2N5191 |
40.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
| 122 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 123 |
2N5191 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 124 |
2N5192 |
40.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 7 hFE. |
Continental Device India Limited |
| 125 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
SGS Thomson Microelectronics |
| 126 |
2N5192 |
MEDIUM POWER NPN SILICON TRANSISTORS |
ST Microelectronics |
| 127 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
| 128 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 129 |
2N5294 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 130 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 131 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
| 132 |
2N5296 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 133 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
| 134 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
| 135 |
2N5298 |
Power NPN silicon transistor, AF amplification and general purpose |
SESCOSEM |
| 136 |
2N5301 |
High-power NPN silicon transistor |
Motorola |
| 137 |
2N5302 |
High-power NPN silicon transistor |
Motorola |
| 138 |
2N5302 |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 139 |
2N5302-D |
High-Power NPN Silicon Transistor |
ON Semiconductor |
| 140 |
2N5303 |
High-power NPN silicon transistor |
Motorola |
| 141 |
2N5336 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 142 |
2N5336 |
Medium Power NPN Transistor |
National Semiconductor |
| 143 |
2N5337 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 144 |
2N5338 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 145 |
2N5338 |
Medium Power NPN Transistor |
National Semiconductor |
| 146 |
2N5339 |
Medium-power NPN silicon transistor designed for switching and wide band amplifier applications |
Motorola |
| 147 |
2N5427 |
Medium-power NPN silicon transistor |
Motorola |
| 148 |
2N5428 |
Medium-power NPN silicon transistor |
Motorola |
| 149 |
2N5429 |
Medium-power NPN silicon transistor |
Motorola |
| 150 |
2N5430 |
Medium-power NPN silicon transistor |
Motorola |
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