| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N6338 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 152 |
2N6338 |
High Power NPN Silicon Transistor |
ON Semiconductor |
| 153 |
2N6338-D |
High-Power NPN Silicon Transistors |
ON Semiconductor |
| 154 |
2N6339 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 155 |
2N6339 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 156 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 157 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 158 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
| 159 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
| 160 |
2N6386 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
| 161 |
2N6387 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
| 162 |
2N6388 |
Plastic 65W medium-power NPN silicon transistor |
Motorola |
| 163 |
2N6486 |
75.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 164 |
2N6486 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
| 165 |
2N6487 |
75.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 166 |
2N6487 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
| 167 |
2N6488 |
75.000W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 15.000A Ic, 20 - 150 hFE. |
Continental Device India Limited |
| 168 |
2N6488 |
15A complementary silicon plastic 75W power NPN transistor |
Motorola |
| 169 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
SGS Thomson Microelectronics |
| 170 |
2N6547 |
HIGH POWER NPN SILICON TRANSISTOR |
ST Microelectronics |
| 171 |
2N6740 |
100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE. |
Continental Device India Limited |
| 172 |
2N929 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 173 |
2N930 |
Silicon planar-epitaxial transistor, low frequency, low power NPN |
IPRS Baneasa |
| 174 |
2SC1622 |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 175 |
2SC1622A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 176 |
2SC1623 |
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 177 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 178 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 179 |
2SC2223 |
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 180 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
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