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Datasheets for GE 40

Datasheets found :: 344
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |
No. Part Name Description Manufacturer
121 AQY221N1SX PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. Matsushita Electric Works(Nais)
122 AQY221N1SZ PhotoMOS relay, RF (radio frequency). C x R 20 type. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. Matsushita Electric Works(Nais)
123 AQY221N2VW PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. Matsushita Electric Works(Nais)
124 AQY221N2VY PhotoMOS relay, RF (radio frequency). C x R 10 type. 1 form A. AC/DC type. Output rating: load voltage 40 V, load current 120 mA. Matsushita Electric Works(Nais)
125 AQY221R2SX PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. Matsushita Electric Works(Nais)
126 AQY221R2SZ PhotoMOS relay, RF (radio frequency). 1 form A, R 10 type. Output rating: load voltage 40 V, load current 250 mA. Matsushita Electric Works(Nais)
127 AQY414EH PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. Matsushita Electric Works(Nais)
128 AQY414EHA PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. Matsushita Electric Works(Nais)
129 AQY414EHAX PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. Matsushita Electric Works(Nais)
130 AQY414EHAZ PhotoMOS relay, GU (general use)-E type, 1-channel (form B). AC/DC type. I/O isolastion reinforced 5,000V. Output rating: load voltage 400 V, load current 120 mA. Matsushita Electric Works(Nais)
131 AQY414SX PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. Matsushita Electric Works(Nais)
132 AQY414SZ PhotoMOS relay, GU (general use) type, 1-channel (form B). Output rating: load voltage 400 V, load current 100 mA. Matsushita Electric Works(Nais)
133 AQZ104 Power photoMOS relay, 1-channel (form A). DC type. Output rating: load voltage 400 V, load current 0.7 A. Matsushita Electric Works(Nais)
134 AQZ104D Power photoMOS relay (voltage sensitive type). DC type. Output rating: load voltage 400 V, load current 0.6 A. Matsushita Electric Works(Nais)
135 AQZ204 Power photoMOS relay, 1-channel (form A). AC/DC type. Output rating: load voltage 400 V, load current 0.5 A. Matsushita Electric Works(Nais)
136 AQZ204D Power photoMOS relay (voltage sensitive type). AC/DC type. Output rating: load voltage 400 V, load current 0.45 A. Matsushita Electric Works(Nais)
137 AQZ264 Power photoMOS relay (high capacity type). AC/DC type. Output rating: load voltage 400 V, load current 1.0 A. Matsushita Electric Works(Nais)
138 BU406H NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. Wing Shing Computer Components
139 BU408 NPN epitaxial silicon transistor. High voltage switching for horizontal deflection output stage. Collector-base voltage 400V. Collector-emitter voltage 200V. Emitter-base voltage 6V. Wing Shing Computer Components
140 C122D Silicon controlled rectifier. Reverse blocking triode thyristor. 8 A RMS. Repetitive peak off-state voltage and repetitive peak reverse voltage 400 V. Motorola
141 C230D Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
142 C230D3 Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
143 C231D Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
144 C231D3 Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
145 C232D Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
146 C233D Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 400 V. Motorola
147 CDBD1540A 15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common anode. Comchip Technology
148 CDBD1540C 15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Common cathod. Comchip Technology
149 CDBD1540D 15.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Double. Comchip Technology
150 CDBM240 2.0 A SMD schottky barrier rectifier. Max repetitive peak reverse voltage 40 V. Comchip Technology


Datasheets found :: 344
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 |



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