No. |
Part Name |
Description |
Manufacturer |
181 |
HA17432UPA-TL |
Shunt regulator, cathode current 150 mA, cathode voltage 40 V, reference voltage 2.5 V |
Hitachi Semiconductor |
182 |
HER1605A |
High efficiency rectifier. Negative CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
183 |
HER1605C |
High efficiency rectifier. Positive CT. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 16.0 A. |
Bytes |
184 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
185 |
HER305P |
High efficiency rectifier. Max recurrent peak reverse voltage 400V, max RMS voltage 280V, max DC blocking voltage 400V. Max average forward recttified current 3.0A at 50degreC. |
Rectron Semiconductor |
186 |
HER805R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. |
Bytes |
187 |
IMT400-48-24 |
Input voltage 40-48-75 VDC;output voltage 24 VDC;output current:20 mA; 200-480 W full brick DC to DC converter |
FranMar International |
188 |
IRF320 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
189 |
IRF322 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
190 |
IRF330 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
191 |
IRF332 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
192 |
IRF350 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 15A. |
General Electric Solid State |
193 |
IRF352 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 13A. |
General Electric Solid State |
194 |
IRF720 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 3.0A. |
General Electric Solid State |
195 |
IRF722 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 2.5A. |
General Electric Solid State |
196 |
IRF730 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
197 |
IRF732 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
198 |
IRFF310 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
199 |
IRFF312 |
Power MOSFET field effect power transistor. Drain-source voltage 400 V. |
General Electric Solid State |
200 |
KBPC1004 |
10 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
201 |
KBPC1504 |
15 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
202 |
KBPC1504 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
203 |
KBPC1504 |
Single-phase silicon bridge rectifier. Current 15A. Maximum recurrent peak reverse voltage 400V. Maximum RMS voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
204 |
KBPC1504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 15 A. |
Shanghai Sunrise Electronics |
205 |
KBPC2504 |
25 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
206 |
KBPC2504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 25 A. |
Shanghai Sunrise Electronics |
207 |
KBPC3504 |
35 A high current bridge rectifier. Max reccurent peak reverse voltage 400 V. |
Comchip Technology |
208 |
KBPC3504 |
Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 400V. Maximum RMS bridge input voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
209 |
KBPC3504 |
Single-phase silicon bridge rectifier. Current 35A. Maximum recurrent peak reverse voltage 400V. Maximum RMS bridge input voltage 280V. Maximum DC blocking voltage 400V |
Wing Shing Computer Components |
210 |
KBPC3504W |
Single phase silicon bridge rectifier. Max repetitive peak reverse voltage 400 V. Max average forward rectified current 35 A. |
Shanghai Sunrise Electronics |
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