No. |
Part Name |
Description |
Manufacturer |
121 |
24LC16BT-I/MS |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
122 |
24LC16BT-I/MSG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
123 |
24LC16BT-I/OT |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
124 |
24LC16BT-I/OTG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
125 |
24LC16BT-I/SN |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
126 |
24LC16BT-I/SNG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
127 |
24LC16BT-I/ST |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
128 |
24LC16BT-I/STG |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
129 |
24LC16BT/SN |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
130 |
24LC16BT/ST |
The 24LC16B is a 16K bit Electrically Erasable PROM memory organized as eight blocks of 256 x 8-bit memory with an I2C ... |
Microchip |
131 |
2B56 |
High Accuracy, Thermocouple Cold Junction Compensator |
Intronics |
132 |
2N1118 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
133 |
2N1118A |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
134 |
2N1119A |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
135 |
2N1420 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
136 |
2N1429 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
137 |
2N1613 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
138 |
2N1613 |
NPN silicon planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
139 |
2N1711 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
140 |
2N1889 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
141 |
2N1890 |
NPN silicon epitaxy planar transistor for amplifier and switch applications |
ITT Semiconductors |
142 |
2N1893 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
143 |
2N2193A |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
144 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
145 |
2N2377 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
146 |
2N2378 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
147 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
148 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
149 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
150 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
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