| No. |
Part Name |
Description |
Manufacturer |
| 151 |
2N2297 |
NPN silicon epitaxy planar transistor for amplifier and switch applications with higher collector current |
ITT Semiconductors |
| 152 |
2N2377 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 153 |
2N2378 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 154 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 155 |
2N3773AR |
NPN silicon power transistor. 16Amp, 140V, 150Watt. High power audio, disk head positioners and other linear applications. Power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. |
USHA India LTD |
| 156 |
2N495 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 157 |
2N496 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 158 |
2N697 |
NPN silicon epitaxy planar transistor for amplifier and switch applications (in german) |
ITT Semiconductors |
| 159 |
2N858 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 160 |
2N859 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 161 |
2N860 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 162 |
2N861 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 163 |
2N862 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 164 |
2N863 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 165 |
2N864 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 166 |
2N865 |
SPAT® PNP silicon transistor switch and amplifiers |
Sprague |
| 167 |
2NU74 |
Low-frequency germanium power transistor with a power loss of 50 W p-n-p type |
Tesla Elektronicke |
| 168 |
2SA1120 |
Silicon PNP epitaxial transistor, strobo flash and audio power amplifier applications |
TOSHIBA |
| 169 |
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 170 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
| 171 |
2SA1314 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Applications |
TOSHIBA |
| 172 |
2SA1327A |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Audio Power Amplifier Applications |
TOSHIBA |
| 173 |
2SA1357 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS AUDIO POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 174 |
2SA1430 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 175 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
| 176 |
2SA1584 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
| 177 |
2SA1634 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 178 |
2SA1635 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 179 |
2SA1758 |
TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE |
ROHM |
| 180 |
2SA1760 |
1.2W PACKAGE POWER TAPED TRANSISTOR DESIGNED FOR USE WITH AN AUTOMATIC PLACEMENT MECHINE |
ROHM |
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