No. |
Part Name |
Description |
Manufacturer |
121 |
2N6340 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
122 |
2N6340 |
25A 200W high-power NPN silicon transistor |
Motorola |
123 |
2N6341 |
HIGH-POWER NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
124 |
2N6341 |
25A 200W high-power NPN silicon transistor |
Motorola |
125 |
2N6371 |
High-power silicon N-P-N transistor. 50V, 117W. |
General Electric Solid State |
126 |
2N6436 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
127 |
2N6437 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
128 |
2N6437-D |
High-Power PNP Silicon Transistors |
ON Semiconductor |
129 |
2N6438 |
HIGH-POWER PNP SILICON TRANSISTORS |
Boca Semiconductor Corporation |
130 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
131 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
132 |
2N6654 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
133 |
2N6654/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
134 |
2N6654/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
135 |
2N6654/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
136 |
2N6654/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
137 |
2N6654A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
138 |
2N6654B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
139 |
2N6655 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
140 |
2N6655/1 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
141 |
2N6655/2 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
142 |
2N6655/3 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
143 |
2N6655/4 |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
144 |
2N6655A |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
145 |
2N6655B |
Silicon NPN High-Power High-Voltage Switching Transistor - metal case |
IPRS Baneasa |
146 |
2SC2318 |
Silicon NPN epitaxial planar high-power for CATV transistor |
TOSHIBA |
147 |
2SD118 |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
148 |
2SD118-BL |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
149 |
2SD118-R |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
150 |
2SD118-Y |
Silicon NPN diffused junction transistor, audio high-power amplifier applications |
TOSHIBA |
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